| Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory K Kim, W Hong, C Lee, WY Lee, HJ Kim, HJ Kwon, H Kang, J Jang Materials Research Express 8 (11), 116301, 2021 | 19 | 2021 |
| Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field DW Kim, HJ Kim, WY Lee, K Kim, SH Lee, JH Bae, IM Kang, K Kim, J Jang Materials 15 (5), 1943, 2022 | 18 | 2022 |
| Environmentally and Electrically Stable Sol–Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That … WY Lee, DW Kim, HJ Kim, K Kim, SH Lee, JH Bae, IM Kang, K Kim, J Jang ACS applied materials & interfaces 14 (8), 10558-10565, 2022 | 15 | 2022 |
| Enhanced switching ratio of sol–gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures K Kim, C Lee, WY Lee, HJ Kim, SH Lee, JH Bae, IM Kang, J Jang Semiconductor Science and Technology 37 (1), 015007, 2021 | 15 | 2021 |
| Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process HJ Kim, DW Kim, WY Lee, K Kim, SH Lee, JH Bae, IM Kang, K Kim, J Jang Materials 15 (5), 1899, 2022 | 11 | 2022 |
| Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance DW Kim, HJ Kim, C Lee, K Kim, JH Bae, IM Kang, J Jang Electronics 10 (2), 200, 2021 | 11 | 2021 |
| Thickness dependence of resistive switching characteristics of the sol–gel processed Y2O3 RRAM devices K Kim, HI Kim, T Lee, WY Lee, JH Bae, IM Kang, SH Lee, K Kim, J Jang Semiconductor Science and Technology 38 (4), 045002, 2023 | 8 | 2023 |
| Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes HI Kim, T Lee, WY Lee, K Kim, JH Bae, IM Kang, SH Lee, K Kim, J Jang Materials 15 (19), 6859, 2022 | 8 | 2022 |
| Room-temperature high-detectivity flexible near-infrared photodetectors with chalcogenide silver telluride nanoparticles WY Lee, K Kim, SH Lee, JH Bae, IM Kang, M Park, K Kim, J Jang ACS omega 7 (12), 10262-10267, 2022 | 8 | 2022 |
| Improved Negative Bias Stability of Sol–Gel-Processed SnO2 Thin-Film Transistors with Vertically Controlled Carrier Concentrations T Lee, K Kim, HI Kim, SH Lee, JH Bae, IM Kang, K Kim, WY Lee, J Jang ACS Applied Electronic Materials 5 (5), 2670-2677, 2023 | 5 | 2023 |
