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Mott variable-range hopping transport in a MoS 2 nanoflake J Xue, S Huang, JY Wang, HQ Xu RSC advances 9 (31), 17885-17890, 2019 | 55 | 2019 |
Dimension engineering of high-quality InAs nanostructures on a wafer scale D Pan, JY Wang, W Zhang, L Zhu, X Su, F Fan, Y Fu, S Huang, D Wei, ... Nano Letters 19 (3), 1632-1642, 2019 | 38 | 2019 |
Anisotropic Pauli spin-blockade effect and spin–orbit interaction field in an InAs nanowire double quantum dot JY Wang, GY Huang, S Huang, J Xue, D Pan, J Zhao, H Xu Nano letters 18 (8), 4741-4747, 2018 | 37 | 2018 |
Full parity phase diagram of a proximitized nanowire island J Shen, GW Winkler, F Borsoi, S Heedt, V Levajac, JY Wang, D van Driel, ... Physical Review B 104 (4), 045422, 2021 | 28 | 2021 |
Hard superconducting gap in germanium A Tosato, V Levajac, JY Wang, CJ Boor, F Borsoi, M Botifoll, CN Borja, ... Communications Materials 4 (1), 23, 2023 | 27 | 2023 |
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts B Feng, S Huang, J Wang, D Pan, J Zhao, HQ Xu Journal of Applied Physics 119 (5), 2016 | 25 | 2016 |
The gate-tunable Josephson diode GP Mazur, N van Loo, D van Driel, JY Wang, G Badawy, S Gazibegovic, ... arXiv preprint arXiv:2211.14283, 2022 | 21 | 2022 |
Electrostatic control of the proximity effect in the bulk of semiconductor-superconductor hybrids N van Loo, GP Mazur, T Dvir, G Wang, RC Dekker, JY Wang, M Lemang, ... Nature Communications 14 (1), 3325, 2023 | 18 | 2023 |
Parametric exploration of zero-energy modes in three-terminal InSb-Al nanowire devices JY Wang, N Van Loo, GP Mazur, V Levajac, FK Malinowski, M Lemang, ... Physical Review B 106 (7), 075306, 2022 | 18 | 2022 |
Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime J Wang, S Huang, Z Lei, D Pan, J Zhao, HQ Xu Applied Physics Letters 109 (5), 2016 | 18 | 2016 |
Spin‐Mixing Enhanced Proximity Effect in Aluminum‐Based Superconductor–Semiconductor Hybrids GP Mazur, N van Loo, JY Wang, T Dvir, G Wang, A Khindanov, ... Advanced Materials 34 (33), 2202034, 2022 | 17 | 2022 |
Single‐Shot Fabrication of Semiconducting–Superconducting Nanowire Devices F Borsoi, GP Mazur, N van Loo, MP Nowak, L Bourdet, K Li, S Korneychuk, ... Advanced Functional Materials 31 (34), 2102388, 2021 | 17 | 2021 |
Gate defined quantum dot realized in a single crystalline InSb nanosheet J Xue, Y Chen, D Pan, JY Wang, J Zhao, S Huang, HQ Xu Applied Physics Letters 114 (2), 2019 | 16 | 2019 |
Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire JY Wang, S Huang, GY Huang, D Pan, J Zhao, HQ Xu Nano Letters 17 (7), 4158-4164, 2017 | 14 | 2017 |
Supercurrent parity meter in a nanowire Cooper pair transistor JY Wang, C Schrade, V Levajac, D van Driel, K Li, S Gazibegovic, ... Science Advances 8 (16), eabm9896, 2022 | 13 | 2022 |
Radio-Frequency - Measurements with Subattofarad Sensitivity FK Malinowski, L Han, D De Jong, JY Wang, CG Prosko, G Badawy, ... Physical Review Applied 18 (2), 024032, 2022 | 11 | 2022 |
A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire J Mu, S Huang, ZH Liu, W Li, JY Wang, D Pan, GY Huang, Y Chen, J Zhao, ... Nanoscale 13 (7), 3983-3990, 2021 | 7 | 2021 |
Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots J Mu, S Huang, JY Wang, GY Huang, X Wang, HQ Xu Nanotechnology 32 (2), 020002, 2020 | 7 | 2020 |
Hard superconducting gap in a high-mobility semiconductor A Tosato, V Levajac, JY Wang, CJ Boor, F Borsoi, M Botifoll, CN Borja, ... arXiv e-prints, arXiv: 2206.00569, 2022 | 5 | 2022 |