| Comprehensive study on RF-MEMS switches used for 5G scenario LY Ma, N Soin, MHM Daut, SFWM Hatta IEEE Access 7, 107506-107522, 2019 | 79 | 2019 |
| Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ... IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013 | 56 | 2013 |
| Performance and Device Design Based on Geometry and Process Considerations for 14/16-nm Strained FinFETs I Fazliyatul Azwa Md Rezali, Nurul Aida Farhana Othman, Maisarah Mazhar ... IEEE TRANSACTIONS ON ELECTRON DEVICES 63 (3), 974-981, 2016 | 51 | 2016 |
| Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation R Gao, AB Manut, Z Ji, J Ma, M Duan, JF Zhang, J Franco, SWM Hatta, ... IEEE Transactions on Electron Devices 64 (4), 1467-1473, 2017 | 47 | 2017 |
| Mapping the field of microbial fuel cell: A quantitative literature review (1970–2020) MN Naseer, AA Zaidi, H Khan, S Kumar, MT bin Owais, J Jaafar, ... Energy Reports 7, 4126-4138, 2021 | 44 | 2021 |
| The effect of gate oxide thickness and drain bias on NBTI degradation in 45nm PMOS SFWM Hatta, N Soin, JF Zhang 2010 IEEE international conference on semiconductor electronics (ICSE2010 …, 2010 | 38* | 2010 |
| Negative bias temperature instability lifetime prediction: Problems and solutions Z Ji, S Hatta, JF Zhang, JG Ma, W Zhang, N Soin, B Kaczer, S De Gendt, ... 2013 IEEE International Electron Devices Meeting, 15.6. 1-15.6. 4, 2013 | 37 | 2013 |
| Predictive As-grown-Generation (AG) model for BTI-induced device/circuit level variations in nanoscale technology nodes R Gao, Z Ji, SM Hatta, JF Zhang, J Franco, B Kaczer, W Zhang, M Duan, ... 2016 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2016 | 30 | 2016 |
| NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling R Gao, Z Ji, AB Manut, JF Zhang, J Franco, SWM Hatta, WD Zhang, ... IEEE Transactions on Electron Devices 64 (10), 4011-4017, 2017 | 29 | 2017 |
| Influence of Oxygen on Structural and Optoelectronic Properties of CdS Thin Film Deposited by Magnetron Sputtering Technique N Islam, M. A., Hatta, S. W. M., Misran, H., Akhtaruzzaman, M., & Amin Chinese Journal of Physics, 2020 | 26 | 2020 |
| Recent progress in the diversity of inkjet-printed flexible sensor structures in biomedical engineering applications H Hussin, N Soin, SFWM Hatta, FAM Rezali, YA Wahab Journal of The Electrochemical Society 168 (7), 077508, 2021 | 23 | 2021 |
| IoT Soil Monitoring based on LoRa Module for Oil Palm Plantation AA Ruslan, SM Salleh, SFWM Hatta, AAB Sajak International Journal of Advanced Computer Science and Applications(IJACSA …, 2021 | 19 | 2021 |
| Optimization of Graded AlInN/AlN/GaN HEMT Device Performance Based on Quaternary Back Barrier for High Power Application S Rahman, NAF Othman, S Wan Muhamad Hatta, N Soin ECS Journal of Solid State Science and Technology 6 (12), 805-812, 2017 | 19 | 2017 |
| An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices P Devaray, SFWM Hatta, YH Wong Journal of Materials Science: Materials in Electronics 33 (10), 7313-7348, 2022 | 14 | 2022 |
| Optimization and detail analysis of novel structure Pb-free CsGeI3-based all-inorganic perovskite solar cells by SCAPS-1D MH Miah, MB Rahman, F Khatun, MU Khandaker, SFWM Hatta, NB Soin, ... Optik 281, 170819, 2023 | 13 | 2023 |
| Understanding the degradation factors, mechanism and initiatives for highly efficient perovskite solar cells MH Miah, MB Rahman, M Nur‐E‐Alam, N Das, NB Soin, SFWM Hatta, ... ChemNanoMat 9 (3), e202200471, 2023 | 13 | 2023 |
| Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the … NAF Othman, SFWM Hatta, N Soin Journal of Electronic Materials 47, 2337-2347, 2018 | 13 | 2018 |
| Effects of the fin width variation on the performance of 16 nm FinFETs with round fin corners and tapered fin shape SWM Hatta, N Soin, SHA Rahman, YA Wahab, H Hussin 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014 …, 2014 | 12 | 2014 |
| Optimization of 7 nm strained germanium finfet design parameters using taguchi method and pareto analysis of variance NAF Othman, FNN Azhari, SFWM Hatta, N Soin ECS Journal of Solid State Science and Technology 7 (4), P161, 2018 | 11 | 2018 |
| Scaling impact on design performance metric of sub-micron CMOS devices incorporated with halo FAM Rezali, SFWM Hatta, N Soin 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015 | 11 | 2015 |
