| Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes W Filali, N Sengouga, S Oussalah, RH Mari, D Jameel, NA Al Saqri, ... Superlattices and Microstructures 111, 1010-1021, 2017 | 31 | 2017 |
| Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques NA Al Saqri, A Mondal, JF Felix, YG Gobato, VO Gordo, H Albalawi, ... Journal of Alloys and Compounds 698, 883-891, 2017 | 22 | 2017 |
| Mössbauer and magnetic studies of Mg1+ 2xSbxFe2− 3xO4 spinel ferrites HM Widatallah, FAS Al-Mamari, NAM Al-Saqri, AM Gismelseed, ... Materials Chemistry and Physics 140 (1), 97-103, 2013 | 22 | 2013 |
| Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1− xNx Schottky diodes A Teffahi, D Hamri, A Mostefa, A Saidane, N Al Saqri, JF Felix, M Henini Current Applied Physics 16 (8), 850-858, 2016 | 20 | 2016 |
| Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1− xNx layers grown by Molecular Beam Epitaxy N Al Saqri, JF Felix, M Aziz, D Jameel, CIL De Araujo, H Albalawi, ... Current Applied Physics 15 (10), 1230-1237, 2015 | 18 | 2015 |
| Analysis of deep level defects in GaN pin diodes after beta particle irradiation S Belahsene, NA Al Saqri, D Jameel, A Mesli, A Martinez, J De Sanoit, ... Electronics 4 (4), 1090-1100, 2015 | 17 | 2015 |
| Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films S de Castro, AF da Silva, JF Felix, MR Piton, HVA Galeti, ADG Rodrigues, ... Journal of Alloys and Compounds 766, 194-203, 2018 | 15 | 2018 |
| Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique N alhuda Al Saqri, JF Felix, M Aziz, VP Kunets, D Jameel, D Taylor, ... Nanotechnology 28 (4), 045707, 2016 | 14 | 2016 |
| High-performance organic/inorganic hybrid heterojunction based on Gallium Arsenide (GaAs) substrates and a conjugated polymer DA Jameel, JF Felix, M Aziz, N Al Saqri, D Taylor, WM De Azevedo, ... Applied Surface Science 357, 2189-2197, 2015 | 14 | 2015 |
| Deep-level transient spectroscopy of interfacial states in “buffer-free” pin GaSb/GaAs devices M Aziz, P Ferrandis, A Mesli, R Hussain Mari, J Francisco Felix, A Sellai, ... Journal of Applied Physics 114 (13), 2013 | 14 | 2013 |
| Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates N Sengouga, R Boumaraf, RH Mari, A Meftah, D Jameel, N Al Saqri, ... Materials Science in Semiconductor Processing 36, 156-161, 2015 | 12 | 2015 |
| Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations DA Jameel, M Aziz, JF Felix, N Al Saqri, D Taylor, H Albalawi, H Alghamdi, ... Applied Surface Science 387, 228-236, 2016 | 11 | 2016 |
| Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (2 1 1) and (3 1 1) oriented GaAs substrates R Boumaraf, N Sengouga, RH Mari, A Meftah, M Aziz, D Jameel, ... Superlattices and Microstructures 65, 319-331, 2014 | 11 | 2014 |
| Computational insight into the fundamental physical properties of ternary ABCl3 chloroperovskites compounds using the DFT approach M Husain, H Albalawi, M Al Huwayz, N alhuda Al Saqri, R Khan, ... Physica Scripta 98 (10), 105935, 2023 | 9 | 2023 |
| Electrical behavior of MBE grown interfacial misfit GaSb/GaAs heterostructures with and without te-doped interfaces M Aziz, JF Felix, N Al Saqri, D Jameel, FS Al Mashary, HM Albalawi, ... IEEE Transactions on Electron Devices 62 (12), 3980-3986, 2015 | 7 | 2015 |
| Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures DA Jameel, JFR Marroquin, M Aziz, NA Al Saqri, I Jum'h, A Telfah, ... Applied Surface Science 504, 144315, 2020 | 5 | 2020 |
| Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures M Aziz, JF Felix, D Jameel, N Al Saqri, FS Al Mashary, HM Alghamdi, ... Superlattices and Microstructures 88, 80-89, 2015 | 5 | 2015 |
| Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures M Aziz, A Mesli, JF Felix, D Jameel, N Al Saqri, D Taylor, M Henini Journal of Crystal Growth 424, 5-10, 2015 | 5 | 2015 |
| Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1− xBix layers grown by Molecular Beam Epitaxy S Alhassan, D de Souza, A Alhassni, A Almunyif, S Alotaibi, A Almalki, ... Journal of Alloys and Compounds 885, 161019, 2021 | 3 | 2021 |
| γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2% N A Teffahi, D Hamri, A Djeghlouf, MA Abid, A Saidane, N Al Saqri, JF Felix, ... Radiation Physics and Chemistry 147, 13-17, 2018 | 2 | 2018 |
