| 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates P Dong, J Yan, J Wang, Y Zhang, C Geng, T Wei, P Cong, Y Zhang, ... Applied Physics Letters 102 (24), 241113, 2013 | 261 | 2013 |
| AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE J Yan, J Wang, Y Zhang, P Cong, L Sun, Y Tian, C Zhao, J Li Journal of Crystal Growth 414, 254-257, 2015 | 128 | 2015 |
| Stimulated emission at 272 nm from an Al x Ga 1− x N-based multiple-quantum-well laser with two-step etched facets Y Tian, Y Zhang, J Yan, X Chen, J Wang, J Li RSC Advances 6 (55), 50245-50249, 2016 | 78* | 2016 |
| Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography Y Zhang, T Wei, Z Xiong, L Shang, Y Tian, Y Zhao, P Zhou, J Wang, J Li Applied Physics Letters 105 (1), 013108, 2014 | 38 | 2014 |
| Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser Y Tian, J Yan, Y Zhang, X Chen, Y Guo, P Cong, L Sun, Q Wang, E Guo, ... Optics express 23 (9), 11334-11340, 2015 | 22 | 2015 |
| Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells Y Tian, J Yan, Y Zhang, Y Zhang, X Chen, Y Guo, J Wang, J Li Nanoscale 8 (21), 11012-11018, 2016 | 21 | 2016 |
| Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode A Zhen, P Ma, Y Zhang, E Guo, Y Tian, B Liu, S Guo, L Shan, J Wang, J Li Applied Physics Letters 105 (25), 251103, 2014 | 16 | 2014 |
| Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars J Kang, Z Li, Z Liu, H Li, Y Zhao, Y Tian, P Ma, X Yi, G Wang Journal of Crystal Growth 386, 175-178, 2014 | 11 | 2014 |
| Deep ultraviolet lasing from AlGaN multiple‐quantum‐well structures J Yan, Y Tian, X Chen, Y Zhang, J Wang, J Li physica status solidi (c), 2015 | 10 | 2015 |
| 氮化物深紫外 LED 研究新进展 王军喜， 闫建昌， 郭亚楠， 张韵， 田迎冬， 朱邵歆， 陈翔， 孙莉莉， 李晋闽 中国科学: 物理学 力学 天文学 45 (6), 067303, 2015 | 10 | 2015 |
| Interface and photoluminescence characteristics of graphene-(GaN/InGaN) n multiple quantum wells hybrid structure L Wang, Z Liu, ZH Zhang, YD Tian, X Yi, J Wang, J Li, G Wang Journal of Applied Physics 119 (14), 143105, 2016 | 3 | 2016 |
| GaN-based violet lasers grown on sapphire with a novel facet fabrication method Y Tian, Y Zhang, J Yan, X Chen, Y Guo, X Wei, J Wang, J Li Solid State Lighting (SSLCHINA), 2015 12th China International Forum on, 16-19, 2015 | | 2015 |
| 氮化镓激光器腔面的制作方法 田迎冬， 董鹏， 张韵， 闫建昌， 孙莉莉， 王军喜， 李晋闽 | | 2014 |
