| Transferable GaN enabled by selective nucleation of AlN on graphene for high‐brightness violet light‐emitting diodes Y Jia, J Ning, J Zhang, C Yan, B Wang, Y Zhang, J Zhu, X Shen, J Dong, ... Advanced Optical Materials 8 (2), 1901632, 2020 | 47 | 2020 |
| Tunable schottky barrier in blue phosphorus–graphene heterojunction with normal strain J Zhu, J Zhang, Y Hao Japanese Journal of Applied Physics 55 (8), 080306, 2016 | 32 | 2016 |
| Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors YZ Wang, XF Zheng, JD Zhu, LL Xu, SR Xu, RL Liang, JN Dai, PX Li, ... Applied Physics Letters 116 (20), 2020 | 31 | 2020 |
| Strong selective oxidization on two-dimensional GaN: a first principles study J Chen, J Zhu, J Ning, X Duan, D Wang, J Zhang, Y Hao Physical Chemistry Chemical Physics 21 (11), 6224-6228, 2019 | 18 | 2019 |
| Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low‐Temperature, High‐Efficiency Carbon‐Electrode CsPbBr3 Solar Cells Z Zhang, W Zhu, T Han, T Wang, W Chai, J Zhu, H Xi, D Chen, G Lu, ... Energy & Environmental Materials 7 (1), e12524, 2024 | 15 | 2024 |
| Gate-Tunable Electronic Structure of Black Phosphorus/HfS2 P–N van der Waals Heterostructure with Uniformly Anisotropic Band Dispersion J Zhu, S Xu, J Ning, D Wang, J Zhang, Y Hao The Journal of Physical Chemistry C 121 (44), 24845-24852, 2017 | 15 | 2017 |
| Unintentional doping effects in black phosphorus by native vacancies in h-BN supporting layer J Zhu, J Zhang, S Xu, Y Hao Applied Surface Science 402 (30), 175-181, 2017 | 14 | 2017 |
| Temperature dependence of the Raman-active modes in the semipolar (112¯ 2) plane GaN Film T Jiang, S Xu, J Zhang, P Li, J Huang, M Niu, X Meng, Z Chen, J Zhu, ... Journal of Applied Physics 120 (24), 2016 | 13 | 2016 |
| Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN Z Chen, J Zhang, S Xu, J Xue, J Zhu, T Jiang, Y Hao Journal of Alloys and Compounds 710, 756-761, 2017 | 12 | 2017 |
| Van der Waals contact between 2D magnetic VSe2 and transition metals and demonstration of high-performance spin-field-effect transistors J Zhu, X Chen, W Shang, J Ning, D Wang, J Zhang, Y Hao Science China Materials 64 (11), 2786-2794, 2021 | 11 | 2021 |
| High performance drain engineered InGaN heterostructure tunnel field effect transistor X Duan, J Zhang, J Chen, T Zhang, J Zhu, Z Lin, Y Hao Micromachines 10 (1), 75, 2019 | 11 | 2019 |
| High-performance two-dimensional InSe field-effect transistors with novel sandwiched ohmic contact for sub-10 nm nodes: a theoretical study J Zhu, J Ning, D Wang, J Zhang, L Guo, Y Hao Nanoscale Research Letters 14, 1-8, 2019 | 10 | 2019 |
| Investigation of GaN with low threading dislocation density grown on graphene/sputtered AlN composite substrate Y Zhang, K Su, R Guo, S Xu, D Chen, J Zhu, W Bao, J Zhang, J Ning, ... physica status solidi (RRL)–Rapid Research Letters 13 (8), 1900167, 2019 | 9 | 2019 |
| Spatial distribution of crystalline quality in N-type GaN grown on patterned sapphire substrate T Jiang, S Xu, J Zhang, P Li, J Huang, Z Ren, M Fu, J Zhu, H Shan, ... Optical Materials Express 6 (6), 1817-1826, 2016 | 9 | 2016 |
| Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate T Jiang, S Xu, J Zhang, P Li, J Huang, Z Ren, J Zhu, Z Chen, Y Zhao, ... AIP Advances 6 (3), 2016 | 9 | 2016 |
| Selectively localized growth of two-dimensional perovskites at grain boundaries for efficient and stable CsPbI3 perovskite solar cells W Chai, W Zhu, Z Zhang, H Xi, D Chen, J Zhu, J Zhang, C Zhang, Y Hao Materials Today Physics 34, 101088, 2023 | 8 | 2023 |
| On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes Y Wang, X Zheng, J Zhu, A Pan, S Bu, Y Hong, J Zhang, L Guo, X Ma, ... Applied Physics Letters 124 (19), 2024 | 7 | 2024 |
| Tunable band offset in black Phosphorus/ReS2 van der Waals heterostructure with robust direct band and inherent anisotropy J Zhu, J Ning, D Wang, J Zhang, L Guo, Y Hao Superlattices and Microstructures 129, 274-281, 2019 | 7 | 2019 |
| Twisted angle modulated structural property, electronic structure and carrier transport of MoS2/AlN (0001) mixed-dimensional van der Waals heterostructure J Zhu, W Shang, J Ning, D Wang, J Zhang, Y Hao Applied Surface Science 563, 150330, 2021 | 5 | 2021 |
| New view on the variation of forward conduction mechanisms derived from electrical stress in UV-A light emitting diodes YZ Wang, XF Zheng, JD Zhu, PX Li, XH Ma, Y Hao Superlattices and Microstructures 130, 208-214, 2019 | 4 | 2019 |
