| Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics M Higashiwaki, K Sasaki, T Kamimura, M Hoi Wong, D Krishnamurthy, ... Applied Physics Letters 103 (12), 2013 | 799 | 2013 |
| Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions T Kamimura, K Sasaki, M Hoi Wong, D Krishnamurthy, A Kuramata, ... Applied Physics Letters 104 (19), 2014 | 240 | 2014 |
| Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density T Kamimura, D Krishnamurthy, A Kuramata, S Yamakoshi, M Higashiwaki Japanese Journal of Applied Physics 55 (12), 1202B5, 2016 | 54 | 2016 |
| Origin of Red Emission in β‐Ga2O3 Analyzed by Cathodoluminescence and Photoluminescence Spectroscopy G Naresh-Kumar, H MacIntyre, S Subashchandran, PR Edwards, ... physica status solidi (b) 258 (2), 2000465, 2021 | 39 | 2021 |
| Correlation between local structure distortions and martensitic transformation in Ni–Mn–In alloys DN Lobo, KR Priolkar, PA Bhobe, D Krishnamurthy, S Emura Applied Physics Letters 96 (23), 2010 | 36 | 2010 |
| Growth of paratellurite crystals: effect of axial temperature gradient on the quality of the crystals S Kumaragurubaran, D Krishnamurthy, C Subramanian, P Ramasamy Journal of Crystal growth 211 (1-4), 276-280, 2000 | 26 | 2000 |
| on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics M Higashiwaki, K Sasaki, T Kamimura, MH Wong, D Krishnamurthy Applied Physics Letters 103, 123511, 2013 | 25 | 2013 |
| Investigations on the growth of Bi2TeO5 and TeO2 crystals S Kumaragurubaran, D Krishnamurthy, C Subramanian, P Ramasamy Journal of crystal growth 197 (1-2), 210-215, 1999 | 15 | 1999 |
| Characterization of InGaGdN layers prepared by molecular beam epitaxy SNM Tawil, R Kakimi, D Krishnamurthy, S Emura, H Tambo, S Hasegawa, ... physica status solidi (RRL)–Rapid Research Letters 4 (11), 308-310, 2010 | 13 | 2010 |
| Growth of oxide crystals: effect of change in melt depth D Krishnamurthy, R Gopalakrishnan, D Arivuoli, P Ramasamy Journal of crystal growth 141 (3-4), 371-375, 1994 | 13 | 1994 |
| Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy SNM Tawil, D Krishnamurthy, R Kakimi, S Emura, S Hasegawa, H Asahi Journal of crystal growth 323 (1), 351-354, 2011 | 12 | 2011 |
| Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics T Matsumoto, D Krishnamurthy, A Fujiwara, S Hasegawa, H Asahi Journal of crystal growth 295 (2), 133-136, 2006 | 12 | 2006 |
| Synthesis, growth and characterization of bismuth tellurite crystals S Kumaragurubaran, D Krishnamurthy, C Subramanian, P Ramasamy Journal of crystal growth 209 (4), 855-860, 2000 | 12 | 2000 |
| Growth of InN quantum dots by droplet epitaxy and their characterization D Krishnamurthy, S Hasegawa, SNM Tawil, S Emura, H Asahi physica status solidi c 9 (3‐4), 666-669, 2012 | 10 | 2012 |
| Influence of Si‐doping on the characteristics of InGaGdN/GaN MQWs grown by MBE SNM Tawil, D Krishnamurthy, R Kakimi, M Ishimaru, S Emura, ... physica status solidi c 8 (2), 491-493, 2011 | 9 | 2011 |
| TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientation D Krishnamurthy, T Matsumoto, A Fujiwara, S Hasegawa, H Asahi Journal of crystal growth 301, 534-538, 2007 | 8 | 2007 |
| Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloysystem KM Kim, WB Kim, D Krishnamurthy, JH Ryu, S Hasegawa, H Asahi Journal of crystal growth 368, 35-38, 2013 | 7 | 2013 |
| Growth and photoluminescence properties of TlInGaAsN/TlGaAsN triple quantum wells KM Kim, S Emura, D Krishnamurthy, S Hasegawa, H Asahi Journal of Applied Physics 108 (5), 2010 | 7 | 2010 |
| Growth of bismuth silicon oxide and bismuth germanium oxide crystals by the Czochralski technique and their characterization R Gopalakrishnan, D Krishnamurthy, D Arivuoli, P Ramasamy Optical Engineering 32 (4), 682, 1993 | 7 | 1993 |
| Some aspects of growth and characterisation of BSO and BGO crystals R Gopalakrishnan, D Krishnamurthy, D Arivuoli, P Ramasamy Ferroelectrics 142 (1), 161-165, 1993 | 6 | 1993 |
Masataka HigashiwakiOsaka Metropolitan University | National Institute of Information and Communications Technology在 omu.ac.jp 的电子邮件经过验证
