| Alteration of Cu conductivity in the size effect regime SM Rossnagel, TS Kuan Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 564 | 2004 |
| Long-Range Order in TS Kuan, TF Kuech, WI Wang, EL Wilkie Physical review letters 54 (3), 201, 1985 | 504 | 1985 |
| Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs TS Kuan, PE Batson, TN Jackson, H Rupprecht, EL Wilkie Journal of applied physics 54 (12), 6952-6957, 1983 | 309 | 1983 |
| Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures WI Wang, EE Mendez, TS Kuan, L Esaki Applied physics letters 47 (8), 826-828, 1985 | 299 | 1985 |
| The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1− xAs layers and heterostructures TF Kuech, E Veuhoff, TS Kuan, V Deline, R Potemski journal of crystal growth 77 (1-3), 257-271, 1986 | 177 | 1986 |
| Microstructure and Schottky barrier height of iridium silicides formed on silicon I Ohdomari, TS Kuan, KN Tu Journal of applied physics 50 (11), 7020-7029, 1979 | 153 | 1979 |
| Formation of iridium silicides from Ir thin films on Si substrates S Petersson, J Baglin, W Hammer, F d’Heurle, TS Kuan, I Ohdomari, ... Journal of Applied Physics 50 (5), 3357-3365, 1979 | 133 | 1979 |
| Low‐temperature selective epitaxial growth of silicon at atmospheric pressure TO Sedgwick, M Berkenblit, TS Kuan Applied physics letters 54 (26), 2689-2691, 1989 | 130 | 1989 |
| Strain relaxation and ordering in SiGe layers grown on (100),(111), and (110) Si surfaces by molecular‐beam epitaxy TS Kuan, SS Iyer Applied physics letters 59 (18), 2242-2244, 1991 | 120 | 1991 |
| Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ... Journal of Electronic Materials 29, 897-900, 2000 | 117 | 2000 |
| Microscopic Compound Formation at the Pd-Si (111) Interface JL Freeouf, GW Rubloff, PS Ho, TS Kuan Physical Review Letters 43 (24), 1836, 1979 | 115 | 1979 |
| Strain relaxation of SiGe islands on compliant oxide H Yin, R Huang, KD Hobart, Z Suo, TS Kuan, CK Inoki, SR Shieh, ... Journal of Applied Physics 91 (12), 9716-9722, 2002 | 106 | 2002 |
| Fabrication and performance limits of sub-0.1 µm Cu interconnects TS Kuan, CK Inoki, GS Oehrlein, K Rose, YP Zhao, GC Wang, ... MRS Online Proceedings Library (OPL) 612, D7. 1.1, 2000 | 105 | 2000 |
| Reactions of Pd on (100) and (110) GaAs surfaces TS Kuan, JL Freeouf, PE Batson, EL Wilkie Journal of applied physics 58 (4), 1519-1526, 1985 | 101 | 1985 |
| WI WANG and EL WILKIE TS Kuan, TF Kuech Appl. Phys. Lett 51, 51, 1987 | 97 | 1987 |
| Low temperature strain behavior of Pb thin films on a substrate TS Kuan, M Murakami Metallurgical Transactions A 13, 383-391, 1982 | 95 | 1982 |
| Growth of GaN on porous SiC and GaN substrates CK Inoki, TS Kuan, CD Lee, A Sagar, RM Feenstra, DD Koleske, DJ Diaz, ... Journal of electronic materials 32, 855-860, 2003 | 88 | 2003 |
| Effects of nanoscale surface roughness on the resistivity of ultrathin epitaxial copper films YP Timalsina, A Horning, RF Spivey, KM Lewis, TS Kuan, GC Wang, ... Nanotechnology 26 (7), 075704, 2015 | 84 | 2015 |
| Damage of ultralow k materials during photoresist mask stripping process X Hua, M Kuo, GS Oehrlein, P Lazzeri, E Iacob, M Anderle, CK Inoki, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 84 | 2006 |
| Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy F Yun, YT Moon, Y Fu, K Zhu, Ü Ozgür, H Morkoç, CK Inoki, TS Kuan, ... Journal of applied physics 98 (12), 2005 | 79 | 2005 |
