| High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides X Hong, A Posadas, K Zou, CH Ahn, J Zhu Physical review letters 102 (13), 136808, 2009 | 275 | 2009 |
| Deposition of High-Quality HfO 2 on Graphene and the Effect of Remote Oxide Phonon Scattering K Zou, X Hong, D Keefer, J Zhu Physical review letters 105 (12), 126601, 2010 | 211 | 2010 |
| Colossal negative magnetoresistance in dilute fluorinated graphene X Hong, SH Cheng, C Herding, J Zhu Physical Review B—Condensed Matter and Materials Physics 83 (8), 085410, 2011 | 207 | 2011 |
| Effective mass of electrons and holes in bilayer graphene: Electron-hole asymmetry and electron-electron interaction K Zou, X Hong, J Zhu Physical Review B—Condensed Matter and Materials Physics 84 (8), 085408, 2011 | 176 | 2011 |
| Quantum scattering time and its implications on scattering sources in graphene X Hong, K Zou, J Zhu Physical Review B—Condensed Matter and Materials Physics 80 (24), 241415, 2009 | 163 | 2009 |
| Ferroelectric-field-induced tuning of magnetism in the colossal magnetoresistive oxide La 1− x Sr x MnO 3 X Hong, A Posadas, A Lin, CH Ahn Physical review B 68 (13), 134415, 2003 | 162 | 2003 |
| Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb (Zr0. 2Ti0. 8) O3 X Hong, J Hoffman, A Posadas, K Zou, CH Ahn, J Zhu Applied Physics Letters 97 (3), 2010 | 159 | 2010 |
| Examining the screening limit of field effect devices via the metal-insulator transition X Hong, A Posadas, CH Ahn Applied Physics Letters 86 (14), 2005 | 142 | 2005 |
| Evidence for spin-flip scattering and local moments in dilute fluorinated graphene X Hong, K Zou, B Wang, SH Cheng, J Zhu Physical review letters 108 (22), 226602, 2012 | 141 | 2012 |
| Synergistic effect of elevated device temperature and excess charge carriers on the rapid light‐induced degradation of perovskite solar cells B Chen, J Song, X Dai, Y Liu, PN Rudd, X Hong, J Huang Advanced Materials 31 (35), 1902413, 2019 | 111 | 2019 |
| Epitaxial growth of on Si and its nanoscale piezoelectric properties A Lin, X Hong, V Wood, AA Verevkin, CH Ahn, RA McKee, FJ Walker, ... Applied Physics Letters 78 (14), 2034-2036, 2001 | 111 | 2001 |
| Ferromagnetism and structure of epitaxial Cr-doped anatase thin films TC Kaspar, T Droubay, V Shutthanandan, SM Heald, CM Wang, ... Physical Review B—Condensed Matter and Materials Physics 73 (15), 155327, 2006 | 100 | 2006 |
| Giant planar Hall effect in colossal magnetoresistive thin films Y Bason, L Klein, JB Yau, X Hong, CH Ahn Applied physics letters 84 (14), 2593-2595, 2004 | 86 | 2004 |
| Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations X Hong Journal of Physics: Condensed Matter 28 (10), 103003, 2016 | 78 | 2016 |
| Examining graphene field effect sensors for ferroelectric thin film studies A Rajapitamahuni, J Hoffman, CH Ahn, X Hong Nano letters 13 (9), 4374-4379, 2013 | 78 | 2013 |
| Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer Z Xiao, J Song, DK Ferry, S Ducharme, X Hong Physical review letters 118 (23), 236801, 2017 | 77 | 2017 |
| Anisotropic Enhancement of Second Harmonic Generation in Monolayer and Bilayer MoS2 by Integrating with TiO2 Nanowires D Li, C Wei, J Song, X Huang, F Wang, K Liu, W Xiong, X Hong, B Cui, ... Nano letters 19 (6), 4195-4204, 2019 | 66 | 2019 |
| Anisotropic magnetoresistance in colossal magnetoresistive La1− xSrxMnO3 thin films JB Yau, X Hong, A Posadas, CH Ahn, W Gao, E Altman, Y Bason, L Klein, ... Journal of Applied Physics 102 (10), 2007 | 65 | 2007 |
| Planar Hall-effect magnetic random access memory Y Bason, L Klein, JB Yau, X Hong, J Hoffman, CH Ahn Journal of applied physics 99 (8), 2006 | 64 | 2006 |
| Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications J Hoffman, X Hong, CH Ahn Nanotechnology 22 (25), 254014, 2011 | 63 | 2011 |
Jun Zhuprofessor of physics, penn state university在 phys.psu.edu 的电子邮件经过验证
