| Effects of crystal phase mixing on the electrical properties of InAs nanowires C Thelander, P Caroff, S Plissard, AW Dey, KA Dick Nano letters 11 (6), 2424-2429, 2011 | 281 | 2011 |
| Growth mechanism of self-catalyzed group III− V nanowires B Mandl, J Stangl, E Hilner, AA Zakharov, K Hillerich, AW Dey, ... Nano letters 10 (11), 4443-4449, 2010 | 251 | 2010 |
| High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ... IEEE Electron device letters 34 (2), 211-213, 2013 | 144 | 2013 |
| Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ... Nano Letters 10 (3), 809-812, 2010 | 136 | 2010 |
| High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires B Ganjipour, AW Dey, BM Borg, M Ek, ME Pistol, KA Dick, LE Wernersson, ... Nano letters 11 (10), 4222-4226, 2011 | 121 | 2011 |
| Single InAs/GaSb nanowire low-power CMOS inverter AW Dey, J Svensson, BM Borg, M Ek, LE Wernersson Nano letters 12 (11), 5593-5597, 2012 | 104 | 2012 |
| III–V nanowire complementary metal–oxide semiconductor transistors monolithically integrated on Si J Svensson, AW Dey, D Jacobsson, LE Wernersson Nano letters 15 (12), 7898-7904, 2015 | 92 | 2015 |
| Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors AW Dey, J Svensson, M Ek, E Lind, C Thelander, LE Wernersson Nano letters 13 (12), 5919-5924, 2013 | 84 | 2013 |
| High-performance inas nanowire mosfets AW Dey, C Thelander, E Lind, KA Dick, BM Borg, M Borgstrom, P Nilsson, ... IEEE Electron Device Letters 33 (6), 791-793, 2012 | 79 | 2012 |
| III-V heterostructure nanowire tunnel FETs E Lind, E Memišević, AW Dey, LE Wernersson IEEE Journal of the Electron Devices Society 3 (3), 96-102, 2015 | 68 | 2015 |
| Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study B Mandl, AW Dey, J Stangl, M Cantoro, LE Wernersson, G Bauer, ... Journal of crystal growth 334 (1), 51-56, 2011 | 66 | 2011 |
| Low-frequency noise in vertical InAs nanowire FETs KM Persson, E Lind, AW Dey, C Thelander, H Sjöland, LE Wernersson IEEE Electron Device Letters 31 (5), 428-430, 2010 | 40 | 2010 |
| Formation of the axial heterojunction in GaSb/InAs (Sb) nanowires with high crystal quality M Ek, BM Borg, AW Dey, B Ganjipour, C Thelander, LE Wernersson, ... Crystal growth & design 11 (10), 4588-4593, 2011 | 39 | 2011 |
| Influence of doping on the electronic transport in GaSb/InAs (Sb) nanowire tunnel devices BM Borg, M Ek, B Ganjipour, AW Dey, KA Dick, LE Wernersson, ... Applied Physics Letters 101 (4), 2012 | 38 | 2012 |
| Electrical properties of GaSb/InAsSb core/shell nanowires B Ganjipour, S Sepehri, AW Dey, O Tizno, BM Borg, KA Dick, ... Nanotechnology 25 (42), 425201, 2014 | 36 | 2014 |
| Diameter reduction of nanowire tunnel heterojunctions using in situ annealing B Mattias Borg, M Ek, KA Dick, B Ganjipour, AW Dey, C Thelander, ... Applied Physics Letters 99 (20), 2011 | 18 | 2011 |
| High current density InAsSb/GaSb tunnel field effect transistors A Dey, M Borg, B Ganjipour, M Ek, KD Thelander, E Lind, P Nilsson, ... 70th Annual Device Research Conference (DRC), 205-206, 2012 | 13 | 2012 |
| High frequency performance of vertical InAs nanowire MOSFET E Lind, M Egard, S Johansson, AC Johansson, BM Borg, C Thelander, ... 2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010 | 4 | 2010 |
| Radial nanowire Esaki diode devices and methods LE Wernersson, E Lind, J Ohlsson, L Samuelson, M Bjork, C Thelander, ... US Patent 10,090,292, 2018 | 3 | 2018 |
| GaSb nanowire pFETs for III-V CMOS AW Dey, J Svensson, BM Borg, M Ek, E Lind, LE Wernersson 71st Device Research Conference, 13-14, 2013 | 1 | 2013 |
Claes ThelanderSolid State Physics, Lund University在 ftf.lth.se 的电子邮件经过验证
