| Bi-enhanced N incorporation in GaAsNBi alloys J Occena, T Jen, EE Rizzi, TM Johnson, J Horwath, YQ Wang, ... Applied Physics Letters 110 (24), 242102, 2017 | 29 | 2017 |
| Influence of surface reconstruction on dopant incorporation and transport properties of GaAs (Bi) alloys RL Field III, J Occena, T Jen, D Del Gaudio, B Yarlagadda, C Kurdak, ... Applied Physics Letters 109 (25), 252105, 2016 | 16 | 2016 |
| Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys J Occena, T Jen, JW Mitchell, WM Linhart, EM Pavelescu, R Kudrawiec, ... Applied Physics Letters 115 (8), 082106, 2019 | 13 | 2019 |
| Surfactant-induced chemical ordering of GaAsN: Bi J Occena, T Jen, H Lu, BA Carter, TS Jimson, AG Norman, RS Goldman Applied Physics Letters 113 (21), 211602, 2018 | 13 | 2018 |
| Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities M Luengo-Kovac, S Huang, D Del Gaudio, J Occena, RS Goldman, ... Physical Review B 96 (19), 195206, 2017 | 13 | 2017 |
| Temperature-dependent study of GaAs1− x− y N x Bi y alloys for band-gap engineering: photoreflectance and k· p modeling W Żuraw, WM Linhart, J Occena, T Jen, JW Mitchell, RS Goldman, ... Applied Physics Express 13 (9), 091005, 2020 | 11 | 2020 |
| Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys EM Pavelescu, O Ligor, J Occena, C Ticoş, A Matei, RL Gavrilă, ... Applied Physics Letters 117 (14), 142106, 2020 | 6 | 2020 |
| Formation and properties of InGaN QDs: Influence of substrates AS Chang, JC Walrath, T Frost, C Greenhill, J Occena, A Hazari, ... Applied Physics Letters 114 (6), 062106, 2019 | 3 | 2019 |
| Hybrid Systems: Exploring Decentralized Water Management at an Urban Residence D Desai, J Occena, H Rockwell Michigan Journal of Sustainability 3, 2015 | 2 | 2015 |
| Influence of arsenic species on the growth and properties of GaAsBi alloys RL Field III, J Occena, T Jen, M Luengo-Kovac, B Yarlagadda, V Sih, ... APS 2015, S14. 014, 2015 | 2 | 2015 |
| Identifying Defects and their Electronic Signatures in Regrown GaN Heterostructures J He, G Cheng, D Del Gaudio, J Occena, F Naab, R Goldman, M Nami, ... APS 2019, K11. 010, 2019 | 1 | 2019 |
| X-ray diffraction studies of GaN pin structures for high power electronics A Zimmerman, J He, GJ Cheng, D Del Gaudio, J Occena, F Naab, M Nami, ... Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Probing the Electronic States in GaAsNBi Alloys A Chen, J Occena, C Kurdak, R Goldman APS 2019, C11. 009, 2019 | | 2019 |
| Current-induced spin polarization in InGaAs and GaAs epilayers as a function of doping density M Luengo-Kovac, S Huang, D Del Gaudio, J Occena, R Goldman, V Sih APS 2017, R42. 002, 2017 | | 2017 |
| Current-induced spin polarization in InGaAs epilayers with varying doping densities M Luengo-Kovac, S Huang, D Del Gaudio, J Occena, R Goldman, V Sih APS 2016, F5. 003, 2016 | | 2016 |
| Electrical characterization of GaAsN and GaAsBi single-quantum-well diodes J Occena, RL Field III, AS Teran, T Jen, C Kurdak, JD Phillips, ... APS 2015, S14. 007, 2015 | | 2015 |
