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Neeraj Kumar Niranjan
Neeraj Kumar Niranjan
在 ece.nits.ac.in 的电子邮件经过验证
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年份
Parametric analysis of a hybrid 1-bit full adder in UDSM and CNTFET technology
NK Niranjan, RB Singh, NZ Rizvi
2016 International Conference on Electrical, Electronics, and Optimization …, 2016
82016
Design and simulation of P-TFET for improved ION/IOFF ratio and subthreshold slope using strained Si1−xGex channel heterojunction
S Choudhury, NK Niranjan, KL Baishnab, K Guha
Microsystem Technologies 26 (6), 1777-1782, 2020
62020
Modeling and simulation of 2-D SixGe (1-x) source dual-gate pocket NTFET
NK Niranjan, P Sarkar, B Bhowmick, M Choudhury, KL Baishnab
Micro and Nanostructures 167, 207237, 2022
42022
Effect of metal work function of asymmetric dielectric tunnel FET on its performance
NK Niranjan, S Choudhury, M Choudhury, KL Baishnab, K Guha, ...
Microsystem Technologies 27, 3757-3762, 2021
32021
Comparative Study on the Role of Different Precursor Salts on Structural, Morphological, and Optoelectronic Characteristics of CH3NH3PbCl3 Perovskite Semiconductor: An …
P Sarkar, NK Niranjan, A Srivastava, SK Tripathy, KL Baishnab, ...
Journal of Electronic Materials 51 (12), 7105-7112, 2022
22022
2-D Si0. 8Ge0. 2 source double-gate pocket PTFET for low power application: Modeling and simulation
NK Niranjan, P Sarkar, B Bhowmick, M Choudhury, KL Baishnab, SD Lala, ...
Materials Science and Engineering: B 303, 117290, 2024
2024
Optimization of 2D Ge-Pocket Asymmetric Dual-Gate Tunnel FETs
NK Niranjan, S Choudhary, M Choudhary, KL Baishanb
Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings …, 2022
2022
A meta-heuristic algorithm-based optimization δp⁺ Si-Ge gate–drain under-lap n-TFET
S Choudhury, NK Neeranjan, KL Baishnab, K Guha
2021 IEEE 18th India Council International Conference (INDICON), 1-5, 2021
2021
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