| Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2 Y Park, H Sim, M Jo, GY Kim, D Yoon, H Han, Y Kim, K Song, D Lee, ... Nature Communications 11 (1), 1401, 2020 | 31 | 2020 |
| Reversible manipulation of photoconductivity caused by surface oxygen vacancies in perovskite stannates with ultraviolet light Y Lee, D Yoon, S Yu, H Sim, Y Park, YS Nam, KJ Kim, SY Choi, Y Kang, ... Advanced Materials 34 (5), 2107650, 2022 | 30 | 2022 |
| Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing M Samizadeh Nikoo, R Soleimanzadeh, A Krammer, G Migliato Marega, ... Nature Electronics 5 (9), 596-603, 2022 | 28 | 2022 |
| Deep Proton Insertion Assisted by Oxygen Vacancies for Long‐Term Memory in VO2 Synaptic Transistor C Oh, I Kim, J Park, Y Park, M Choi, J Son Advanced Electronic Materials 7 (2), 2000802, 2021 | 25 | 2021 |
| Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates DK Lee, Y Park, H Sim, J Park, Y Kim, GY Kim, CB Eom, SY Choi, J Son Nature communications 12 (1), 5019, 2021 | 18 | 2021 |
| Steep-slope threshold switch enabled by pulsed-laser-induced phase transformation Y Park, D Yoon, K Fukutani, R Stania, J Son ACS applied materials & interfaces 11 (27), 24221-24229, 2019 | 14 | 2019 |
| Simultaneous reduction of multi-dimensional defects in Sn-excess epitaxial films induced by surface chemical reconstruction D Yoon, S Yu, Y Lee, Y Park, J Son Physical Review Materials 5 (1), 014602, 2021 | 9 | 2021 |
| Voltage-triggered insulator-to-metal transition of ALD NbO x thin films for a two-terminal threshold switch N Park, YT Kim, Y Park, JY Cho, SS Oh, J Heo, J Son Journal of Materials Chemistry C 8 (41), 14365-14369, 2020 | 7 | 2020 |
| Anionic flow valve across oxide heterointerfaces by remote electron doping Y Park, H Sim, KY Doh, M Jo, D Lee, SY Choi, J Son Nano Letters 22 (23), 9306-9312, 2022 | 4 | 2022 |
| Piezo strain–controlled phase transition in single-crystalline Mott switches for threshold-manipulated leaky integrate-and-fire neurons DK Lee, S Lee, H Sim, Y Park, SY Choi, J Son Science Advances 10 (14), eadk8836, 2024 | 1 | 2024 |
| Crystallographic Pathways to Tailoring Metal‐Insulator Transition through Oxygen Transport in VO2 H Sim, KY Doh, Y Park, K Song, GY Kim, J Son, D Lee, SY Choi Small, 2402260, 2024 | | 2024 |
| Promotion of Probabilistic Bit Generation in Mott Devices by Embedded Metal Nanoparticles Y Seo, Y Park, P Hur, M Jo, J Heo, BJ Choi, J Son Advanced Materials, 2402490, 2024 | | 2024 |
| Accelerating metal nanoparticle exsolution by exploiting tolerance factor of perovskite stannate Y Lee, D Yoon, YS Nam, S Yu, C Lim, H Sim, Y Park, JW Han, SY Choi, ... Materials Horizons, 2024 | | 2024 |
| Reversible Manipulation of Photoconductivity Caused by Surface Oxygen Vacancies in Perovskite Stannates with Ultraviolet Light (Adv. Mater. 5/2022) Y Lee, D Yoon, S Yu, H Sim, Y Park, YS Nam, KJ Kim, SY Choi, Y Kang, ... Advanced Materials 34 (5), 2270040, 2022 | | 2022 |
| Glass-like Electronics in Vanadium Dioxide M Samizadeh Nikoo, R Soleimanzadeh, A Krammer, Y Park, J Son, ... arXiv e-prints, arXiv: 2111.03181, 2021 | | 2021 |
