| Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films YH Lee, SD Hyun, HJ Kim, JS Kim, C Yoo, T Moon, KD Kim, HW Park, ... Advanced Electronic Materials 5 (2), 1800436, 2019 | 80 | 2019 |
| Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior S Yoo, C Yoo, ES Park, W Kim, YK Lee, CS Hwang Journal of Materials Chemistry C 6 (18), 5025-5032, 2018 | 42 | 2018 |
| Atomic layer deposition of chalcogenides for next-generation phase change memory YK Lee, C Yoo, W Kim, JW Jeon, CS Hwang Journal of Materials Chemistry C 9 (11), 3708-3725, 2021 | 36 | 2021 |
| Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms T Gwon, T Eom, S Yoo, C Yoo, E Park, S Kim, MS Kim, I Buchanan, ... Chemistry of Materials 29 (19), 8065-8072, 2017 | 35 | 2017 |
| Atomic Layer Deposition of GexSe1–x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage C Yoo, W Kim, JW Jeon, ES Park, M Ha, YK Lee, CS Hwang ACS applied materials & interfaces 12 (20), 23110-23118, 2020 | 30 | 2020 |
| Atomic layer deposition of GeSe films using HGeCl3 and [(CH3) 3Si] 2Se with the discrete feeding method for the ovonic threshold switch W Kim, S Yoo, C Yoo, ES Park, J Jeon, YJ Kwon, KS Woo, HJ Kim, ... Nanotechnology 29 (36), 365202, 2018 | 27 | 2018 |
| Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory ES Park, C Yoo, W Kim, M Ha, JW Jeon, T Eom, YK Lee, CS Hwang Chemistry of Materials 31 (21), 8752-8763, 2019 | 23 | 2019 |
| Matrix mapping on crossbar memory arrays with resistive interconnects and its use in in-memory compression of biosignals YK Lee, JW Jeon, ES Park, C Yoo, W Kim, M Ha, CS Hwang Micromachines 10 (5), 306, 2019 | 20 | 2019 |
| Electroforming-free bipolar resistive switching in GeSe thin films with a Ti-containing electrode W Kim, C Yoo, ES Park, M Ha, JW Jeon, GS Kim, KS Woo, YK Lee, ... ACS applied materials & interfaces 11 (42), 38910-38920, 2019 | 19 | 2019 |
| Developing precursor chemistry for atomic layer deposition of high-density, conformal GeTe films for phase-change memory ES Park, C Yoo, W Kim, M Ha, JW Jeon, YK Lee, CS Hwang Chemistry of Materials 31 (21), 8663-8672, 2019 | 19 | 2019 |
| Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory C Yoo, JW Jeon, S Yoon, Y Cheng, G Han, W Choi, B Park, G Jeon, ... Advanced Materials 34 (50), 2207143, 2022 | 18 | 2022 |
| Effect of electrode material on the crystallization of GeTe grown by atomic layer deposition for phase change random access memory SI Oh, IH Im, C Yoo, SY Ryu, Y Kim, S Choi, T Eom, CS Hwang, BJ Choi Micromachines 10 (5), 281, 2019 | 11 | 2019 |
| Structural analyses of phase stability in amorphous and partially crystallized Ge-rich GeTe films prepared by atomic layer deposition T Gwon, AY Mohamed, C Yoo, E Park, S Kim, S Yoo, HK Lee, DY Cho, ... ACS applied materials & interfaces 9 (47), 41387-41396, 2017 | 10 | 2017 |
| Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering F Huang, B Saini, Z Yu, C Yoo, V Thampy, X He, JD Baniecki, W Tsai, ... ACS Applied Materials & Interfaces 15 (43), 50246-50253, 2023 | 8 | 2023 |
| Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis (cyclopentadienyl) magnesium precursor BW Wang, J Choi, HG Kim, SD Hyun, C Yoo, S Kim, H Lee, CS Hwang Journal of Materials Chemistry C 9 (42), 15359-15374, 2021 | 7 | 2021 |
| Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Coinjection YK Lee, ES Park, C Yoo, W Kim, JW Jeon, M Ha, CS Hwang Crystal Growth & Design 20 (7), 4649-4656, 2020 | 6 | 2020 |
| Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors C Yoo, J Hartanto, B Saini, W Tsai, V Thampy, SS Niavol, AC Meng, ... Nano Letters 24 (19), 5737-5745, 2024 | 3 | 2024 |
| Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks JW Jeon, B Park, YH Jang, SH Lee, S Jeon, J Han, SK Ryoo, KD Kim, ... ACS Applied Materials & Interfaces 16 (12), 15032-15042, 2024 | 3 | 2024 |
| Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor W Choi, G Kim, HY Kim, C Yoo, JW Jeon, B Park, G Jeon, S Jeon, S Kang, ... ACS Applied Electronic Materials 5 (3), 1721-1729, 2023 | 3 | 2023 |
| Atomic layer deposition of SnSe x thin films using Sn (N (CH 3) 2) 4 and Se (Si (CH 3) 3) 2 with NH 3 co-injection JW Jeon, C Yoo, W Kim, W Choi, B Park, YK Lee, CS Hwang Dalton Transactions 51 (2), 594-601, 2022 | 3 | 2022 |
