| Plasma treatment of hafnium-containing materials S Muthukrishnan, R Sharangpani, T Goyani, P Narwankar, S Kher, ... US Patent App. 11/167,070, 2006 | 637 | 2006 |
| Atomic layer deposition processes for non-volatile memory devices Y Ma, SS Kher, K Ahmed, T Goyani, M Mahajani, J Ravi, YC Huang US Patent 7,659,158, 2010 | 562 | 2010 |
| Characterization of ultra-thin oxides using electrical CV and IV measurements JR Hauser, K Ahmed AIP Conference Proceedings 449 (1), 235-239, 1998 | 508 | 1998 |
| Modeled tunnel currents for high dielectric constant dielectrics EM Vogel, KZ Ahmed, B Hornung, WK Henson, PK McLarty, G Lucovsky, ... IEEE Transactions on Electron Devices 45 (6), 1350-1355, 1998 | 225 | 1998 |
| Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALD F Greer, K Ahmed, CA Chen, W Zhu US Patent App. 14/135,266, 2015 | 200 | 2015 |
| Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors WK Henson, KZ Ahmed, EM Vogel, JR Hauser, JJ Wortman, RD Venables, ... IEEE Electron Device Letters 20 (4), 179-181, 1999 | 196 | 1999 |
| Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices JW Anthis, KZ Ahmed US Patent 8,993,058, 2015 | 186 | 2015 |
| On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping … S Mahapatra, K Ahmed, D Varghese, AE Islam, G Gupta, L Madhav, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 156 | 2007 |
| Characterization and metrology for ULSI technology JR Hauser, K Ahmed AIP Conf. Proc 449, 235-239, 1998 | 148 | 1998 |
| On the dispersive versus Arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications D Varghese, D Saha, S Mahapatra, K Ahmed, F Nouri, M Alam IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 145 | 2005 |
| Transistor wars K Ahmed, K Schuegraf IEEE Spectrum 48 (11), 50-66, 2011 | 124 | 2011 |
| Vapor deposition of hafnium silicate materials with tris (dimethylamino) silane S Muthukrishnan, T Goyani, R Sharangpani, S Kher, P Narwankar, ... US Patent App. 11/223,896, 2006 | 117 | 2006 |
| Method for fabricating a dielectric stack P Narwankar, S Kher, S Muthukrishnan, R Sharangpani, P Kraus, C Olsen, ... US Patent App. 11/298,553, 2006 | 115 | 2006 |
| pMOSFET with 200% mobility enhancement induced by multiple stressors L Washington, F Nouri, S Thirupapuliyur, G Eneman, P Verheyen, ... IEEE Electron Device Letters 27 (6), 511-513, 2006 | 92 | 2006 |
| A unified model for insulator selection to form ultra-low resistivity metal-insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs A Agrawal, N Shukla, K Ahmed, S Datta Applied Physics Letters 101 (4), 2012 | 90 | 2012 |
| Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: a comprehensive study by ultra-fast on-the-fly (UF-OTF) I DLIN technique EN Kumar, VD Maheta, S Purawat, AE Islam, C Olsen, K Ahmed, MA Alam, ... 2007 IEEE international electron devices meeting, 809-812, 2007 | 66 | 2007 |
| Gate leakage vs. NBTI in plasma nitrided oxides: Characterization, physical principles, and optimization AE Islam, G Gupta, S Mahapatra, AT Krishnan, K Ahmed, F Nouri, A Oates, ... 2006 international electron devices meeting, 1-4, 2006 | 61 | 2006 |
| Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal Y Ma, KZ Ahmed, KL Cunningham, RC McIntosh, AJ Mayur, H Liang, ... US Patent 7,078,302, 2006 | 61 | 2006 |
| Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-/spl Aring/gate oxide MOSFETs K Ahmed, E Ibok, GCF Yeap, Q Xiang, B Ogle, JJ Wortman, JR Hauser IEEE Transactions on Electron Devices 46 (8), 1650-1655, 1999 | 57 | 1999 |
| The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $ I_ {\rm DLIN … VD Maheta, C Olsen, K Ahmed, S Mahapatra IEEE transactions on electron devices 55 (7), 1630-1638, 2008 | 50 | 2008 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)在 ee.iitb.ac.in 的电子邮件经过验证
