| Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions MA Khan, JN Kuznia, JM Van Hove, N Pan, J Carter Applied Physics Letters 60 (24), 3027-3029, 1992 | 300 | 1992 |
| 190-fs passively mode-locked thulium fiber laser with a low threshold RC Sharp, DE Spock, N Pan, J Elliot Optics letters 21 (12), 881-883, 1996 | 258 | 1996 |
| High reliability InGaP/GaAs HBT N Pan, J Elliott, M Knowles, DP Vu, K Kishimoto, JK Twynam, H Sato, ... IEEE Electron Device Letters 19 (4), 115-117, 1998 | 112 | 1998 |
| High on-state breakdown heterojunction bipolar transistor N Pan, A Wibowo US Patent 7,687,886, 2010 | 108 | 2010 |
| Hydrogen passivation of C acceptors in high‐purity GaAs N Pan, SS Bose, MH Kim, GE Stillman, F Chambers, G Devane, CR Ito, ... Applied physics letters 51 (8), 596-598, 1987 | 88 | 1987 |
| Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability TS Low, CP Hutchinson, PC Canfield, TS Shirley, RE Yeats, JSC Chang, ... GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th …, 1998 | 83 | 1998 |
| AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor N Pan, BK Han US Patent 6,917,061, 2005 | 79 | 2005 |
| Low emitter resistance contacts to GaAs high speed HBT N Pan, BK Han US Patent 6,661,037, 2003 | 78 | 2003 |
| Bipolar transistor with lattice matched base layer RE Welser, PM Deluca, N Pan US Patent 7,186,624, 2007 | 75 | 2007 |
| Reactor vessel for the growth of heterojunction devices WE Hoke, N Pan, JR Carter US Patent 5,077,875, 1992 | 75 | 1992 |
| Graded base GaAsSb for high speed GaAs HBT N Pan, BK Han US Patent 6,784,450, 2004 | 72 | 2004 |
| GaAs MOSFET using InAlP native oxide as gate dielectric X Li, Y Cao, DC Hall, P Fay, B Han, A Wibowo, N Pan IEEE Electron Device Letters 25 (12), 772-774, 2004 | 64 | 2004 |
| Lightweight, low cost GaAs solar cells on 4 ″epitaxial liftoff (ELO) wafers R Tatavarti, G Hillier, A Dzankovic, G Martin, F Tuminello, ... 2008 33rd IEEE Photovoltaic Specialists Conference, 1-4, 2008 | 59 | 2008 |
| InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4 ″epitaxial lifted off (ELO) wafers R Tatavarti, A Wibowo, G Martin, F Tuminello, C Youtsey, G Hillier, N Pan, ... 2010 35th IEEE Photovoltaic Specialists Conference, 002125-002128, 2010 | 54 | 2010 |
| Performance enhancement of GaInP/GaAs heterojunction bipolar phototransistors using DC base bias R Sridhara, SM Frimel, KP Roenker, N Pan, J Elliott Journal of lightwave technology 16 (6), 1101, 1998 | 51 | 1998 |
| Si donor neutralization in high‐purity GaAs N Pan, B Lee, SS Bose, MH Kim, JS Hughes, GE Stillman, K Arai, ... Applied physics letters 50 (25), 1832-1834, 1987 | 50 | 1987 |
| Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/Ny base layers RE Welser, PM DeLuca, N Pan IEEE Electron Device Letters 21 (12), 554-556, 2000 | 49 | 2000 |
| Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation GS Jackson, N Pan, MS Feng, GE Stillman, N Holonyak Jr, RD Burnham Applied physics letters 51 (20), 1629-1631, 1987 | 48 | 1987 |
| Epitaxial lift-off of large-area GaAs thin-film multi-junction solar cells C Youtsey, J Adams, R Chan, V Elarde, G Hillier, M Osowski, D McCallum, ... CS Mantech Conference, 23-26, 2012 | 41 | 2012 |
| InGaAs/AlInAs strain-compensated superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions LJ Mawst, JD Kirch, CC Chang, T Kim, T Garrod, D Botez, S Ruder, ... Journal of Crystal Growth 370, 230-235, 2013 | 39 | 2013 |
