| Single-particle excitations in quasi-zero-and quasi-one-dimensional electron systems R Strenz, U Bockelmann, F Hirler, G Abstreiter, G Böhm, G Weimann Physical review letters 73 (22), 3022, 1994 | 127 | 1994 |
| Embedded flash technologies and their applications: Status & outlook R Strenz 2011 International Electron Devices Meeting, 9.4. 1-9.4. 4, 2011 | 61 | 2011 |
| Review and outlook on embedded NVM technologies–from evolution to revolution R Strenz 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 33 | 2020 |
| Deep trench isolation structures and methods of formation thereof A Tilke, DP Shum, L Pescini, R Kakoschke, KR Strenz, M Stiftinger US Patent 7,679,130, 2010 | 33 | 2010 |
| Highly reliable flash memory with self-aligned split-gate cell embedded into high performance 65nm CMOS for automotive & smartcard applications D Shum, JR Power, R Ullmann, E Suryaputra, K Ho, J Hsiao, CH Tan, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 29 | 2012 |
| Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs quantum wires F Hirler, R Küchler, R Strenz, G Abstreiter, G Böhm, J Smoliner, G Tränkle, ... Surface science 263 (1-3), 536-540, 1992 | 26 | 1992 |
| Method for manufacturing a memory cell arrangement DPC Shum, R Strenz US Patent 7,611,941, 2009 | 23 | 2009 |
| Confined plasmons in shallow etched quantum wires R Strenz, V Rosskopf, F Hirler, G Abstreiter, G Bohm, G Trankle, ... Semiconductor science and technology 9 (4), 399, 1994 | 23 | 1994 |
| Magnetic shielding of perpendicular STT-MRAM R Allinger, K Hofmann, K Knobloch, R Strenz US Patent 9,564,403, 2017 | 19 | 2017 |
| Method for making semiconductor device J Power, DPC Shum, W Dickenscheid, R Strenz US Patent 8,470,670, 2013 | 16 | 2013 |
| Memory K Knobloch, R Strenz US Patent 9,147,840, 2015 | 14 | 2015 |
| Memory cell arrangement, method for controlling a memory cell, memory array and electronic device R Strenz, W Langheinrich, M Roehrich, R Wiesner US Patent 9,030,877, 2015 | 14 | 2015 |
| Optically detected cyclotron resonance on GaAs/Al x Ga 1− x As quantum wells and quantum wires DM Hofmann, M Drechsler, C Wetzel, BK Meyer, F Hirler, R Strenz, ... Physical Review B 52 (15), 11313, 1995 | 13 | 1995 |
| Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots F Hirler, R Strenz, R Kuchler, G Abstreiter, G Bohm, J Smoliner, G Trankle, ... Semiconductor science and technology 8 (4), 617, 1993 | 13 | 1993 |
| Memory cell arrangement, method for controlling a memory cell, memory array and electronic device R Strenz, W Langheinrich, M Roehrich, R Wiesner US Patent 8,320,191, 2012 | 12 | 2012 |
| Improved Reliability of a High-k IPD Flash Cell through use of a Top-oxide JR Power, Y Gong, G Tempel, EO Andersen, W Langheinrich, D Shum, ... 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, 27-29, 2007 | 12 | 2007 |
| Abnormal charge loss of flash cells at medium temperatures G Tempel, J Hermann, M Kerber, T Kern, R Strenz, R Wiesner IEEE NVSM Workshop, 105-107, 2000 | 12 | 2000 |
| Semiconductor substrate arrangement, a semiconductor device, and a method for processing a semiconductor substrate W Langheinrich, R Strenz, G Tempel, K Stahrenberg, N Hatzopoulos, ... US Patent App. 14/597,342, 2016 | 11 | 2016 |
| ALD-Al2O3 as an inter-poly dielectric for a product demonstrator in a proven eFlash technology D Shum, G Jaschke, M Canning, R Kakoschke, R Duschl, R Sikorski, ... 2009 IEEE International Memory Workshop, 1-4, 2009 | 9 | 2009 |
| Improved retention for a Al2O3 IPD embedded Flash cell without top-oxide JR Power, D Shum, Y Gong, S Bogacz, J Haeupel, H Estel, R Strenz, ... 2008 Joint Non-Volatile Semiconductor Memory Workshop and International …, 2008 | 7 | 2008 |
