| Direct and indirect band-to-band tunneling in germanium-based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ... IEEE Transactions on Electron Devices 59 (2), 292-301, 2011 | 477 | 2011 |
| Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken Journal of Applied Physics 107 (2), 2010 | 280 | 2010 |
| Optimization of gate-on-source-only tunnel FETs with counter-doped pockets KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ... IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012 | 155 | 2012 |
| Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ... Applied Physics Letters 102 (1), 2013 | 132 | 2013 |
| Impact of field-induced quantum confinement in tunneling field-effect devices WG Vandenberghe, B Sorée, W Magnus, G Groeseneken, MV Fischetti Applied Physics Letters 98 (14), 2011 | 121 | 2011 |
| Analytical model for point and line tunneling in a tunnel field-effect transistor W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus 2008 international conference on simulation of semiconductor processes and …, 2008 | 120 | 2008 |
| Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode B Sorée, W Magnus, G Pourtois Journal of computational electronics 7, 380-383, 2008 | 115 | 2008 |
| Analytical model for a tunnel field-effect transistor WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008 | 113 | 2008 |
| Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing A Nourbakhsh, M Cantoro, A Klekachev, F Clemente, B Soree, ... The Journal of Physical Chemistry C 114 (15), 6894-6900, 2010 | 105 | 2010 |
| Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ... 2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011 | 82 | 2011 |
| Nanoscale domain wall devices with magnetic tunnel junction read and write E Raymenants, O Bultynck, D Wan, T Devolder, K Garello, L Souriau, ... Nature Electronics 4 (6), 392-398, 2021 | 73 | 2021 |
| Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach W Vandenberghe, B Sorée, W Magnus, MV Fischetti Journal of Applied Physics 109 (12), 2011 | 65 | 2011 |
| Design and benchmarking of hybrid CMOS-spin wave device circuits compared to 10nm CMOS O Zografos, B Sorée, A Vaysset, S Cosemans, L Amaru, PE Gaillardon, ... 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 686-689, 2015 | 61 | 2015 |
| Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe npj 2D Materials and Applications 5 (1), 54, 2021 | 60 | 2021 |
| InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ... Journal of Applied Physics 115 (18), 2014 | 60 | 2014 |
| Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers Y Zhang, MV Fischetti, B Sorée, W Magnus, M Heyns, M Meuris Journal of applied physics 106 (8), 2009 | 52 | 2009 |
| Temperature-dependent modeling and characterization of through-silicon via capacitance G Katti, M Stucchi, D Velenis, B Soree, K De Meyer, W Dehaene IEEE Electron Device Letters 32 (4), 563-565, 2011 | 51 | 2011 |
| A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors WG Vandenberghe, AS Verhulst, KH Kao, KD Meyer, B Sorée, W Magnus, ... Applied Physics Letters 100 (19), 2012 | 47 | 2012 |
| Critical behavior of the ferromagnets , and and the antiferromagnet : A detailed first-principles study S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe Physical Review B 103 (1), 014432, 2021 | 43 | 2021 |
| Zener tunneling in semiconductors under nonuniform electric fields W Vandenberghe, B Sorée, W Magnus, G Groeseneken Journal of Applied Physics 107 (5), 2010 | 41 | 2010 |
William VandenbergheAssociate Professor at U.T. Dallas, dept. Materials Science & Engineering在 utdallas.edu 的电子邮件经过验证
