| Disease detection and management via single nanopore-based sensors JE Reiner, A Balijepalli, JWF Robertson, J Campbell, J Suehle, ... Chemical reviews 112 (12), 6431-6451, 2012 | 255 | 2012 |
| Atomic-scale defects involved in the negative-bias temperature instability JP Campbell, PM Lenahan, CJ Cochrane, AT Krishnan, S Krishnan IEEE Transactions on Device and Materials Reliability 7 (4), 540-557, 2007 | 133 | 2007 |
| Density of states of interface trap centers JP Campbell, PM Lenahan Applied physics letters 80 (11), 1945-1947, 2002 | 119 | 2002 |
| Random telegraph noise in highly scaled nMOSFETs JP Campbell, J Qin, KP Cheung, LC Yu, JS Suehle, A Oates, K Sheng 2009 IEEE International Reliability Physics Symposium, 382-388, 2009 | 109 | 2009 |
| Electron spin resonance spectrometer and method for using same JP Campbell, KP Cheung, JT Ryan, PM Lenahan US Patent 9,507,004, 2016 | 98 | 2016 |
| Observations of NBTI-induced atomic-scale defects JP Campbell, PM Lenahan, AT Krishnan, S Krishnan IEEE Transactions on Device and Materials Reliability 6 (2), 117-122, 2006 | 85 | 2006 |
| A simple series resistance extraction methodology for advanced CMOS devices JP Campbell, KP Cheung, JS Suehle, A Oates IEEE electron device letters 32 (8), 1047-1049, 2011 | 84 | 2011 |
| Modeling early breakdown failures of gate oxide in SiC power MOSFETs Z Chbili, A Matsuda, J Chbili, JT Ryan, JP Campbell, M Lahbabi, ... IEEE Transactions on Electron Devices 63 (9), 3605-3613, 2016 | 79 | 2016 |
| Direct observation of the structure of defect centers involved in the negative bias temperature instability JP Campbell, PM Lenahan, AT Krishnan, S Krishnan Applied Physics Letters 87 (20), 2005 | 69 | 2005 |
| NBTI: An atomic-scale defect perspective JP Campbell, PM Lenahan, AT Krishnan, S Krishnan 2006 IEEE International Reliability Physics Symposium Proceedings, 442-447, 2006 | 60 | 2006 |
| Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors JP Campbell, PM Lenahan, AT Krishnan, S Krishnan Journal of Applied Physics 103 (4), 2008 | 52 | 2008 |
| Oxide reliability of SiC MOS devices L Yu, KP Cheung, J Campbell, JS Suehle, K Sheng 2008 IEEE International Integrated Reliability Workshop Final Report, 141-144, 2008 | 45 | 2008 |
| Radiation-induced interface traps in MOS devices: Capture cross section and density of states of P/sub b1/silicon dangling bond centers PM Lenahan, NA Bohna, JP Campbell IEEE Transactions on Nuclear Science 49 (6), 2708-2712, 2002 | 41 | 2002 |
| Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs JP Campbell, LC Yu, KP Cheung, J Qin, JS Suehle, A Oates, K Sheng 2009 IEEE International Conference on IC Design and Technology, 17-20, 2009 | 40 | 2009 |
| Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs JP Campbell, PM Lenahan, AT Krishnan, S Krishnan 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 35 | 2007 |
| Interface-state capture cross section—Why does it vary so much? JT Ryan, A Matsuda, JP Campbell, KP Cheung Applied Physics Letters 106 (16), 2015 | 34 | 2015 |
| First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric … W Chung, M Si, PR Shrestha, JP Campbell, KP Cheung, DY Peide 2018 IEEE Symposium on VLSI Technology, 89-90, 2018 | 32 | 2018 |
| Time dependent dielectric breakdown in high quality SiC MOS capacitors Z Chbili, KP Cheung, JP Campbell, J Chbili, M Lahbabi, DE Ioannou, ... Materials Science Forum 858, 615-618, 2016 | 32 | 2016 |
| The origins of random telegraph noise in highly scaled SiON nMOSFETs JP Campbell, J Qin, KP Cheungl, L Yu, JS Suehlel, A Oates, K Sheng 2008 IEEE International Integrated Reliability Workshop Final Report, 105-109, 2008 | 29 | 2008 |
| A model for NBTI in nitrided oxide MOSFETs which does not involve hydrogen or diffusion PM Lenahan, JP Campbell, AT Krishnan, S Krishnan IEEE Transactions on Device and Materials Reliability 11 (2), 219-226, 2010 | 28 | 2010 |
Pragya Rasmi ShresthaOld Dominion University and National Institute of Standards and technology在 nist.gov 的电子邮件经过验证
