| Optical phonons and structure of TlGaS2, TlGaSe2, and TlInS2 layer single crystals NM Gasanly, AF Goncharov, NN Melnik, AS Ragimov, VI Tagirov physica status solidi (b) 116 (2), 427-443, 1983 | 82 | 1983 |
| Donor–acceptor pair recombination in gallium sulfide A Aydinli, NM Gasanly, K Gökşen Journal of Applied Physics 88 (12), 7144-7149, 2000 | 69 | 2000 |
| Infrared and Raman spectra of layer InSe single crystals N Hasanlı, VI Tagirov, EA Vinogradov Wiley, 1978 | 68 | 1978 |
| Temperature dependence of the first-order Raman scattering in GaS layered crystals NM Gasanly, A Aydınlı, H Özkan, C Kocabaş Solid state communications 116 (3), 147-151, 2000 | 67 | 2000 |
| Raman scattering in some III‐VI layer single crystals FE Faradev, NM Gasanly, BN Mavrin, NN Melnik physica status solidi (b) 85 (1), 381-386, 1978 | 62 | 1978 |
| Donor-acceptor pair recombination in single crystals NM Gasanly, A Serpengüzel, A Aydinli, O Gürlü, I Yilmaz Journal of applied physics 85 (6), 3198-3201, 1999 | 61 | 1999 |
| Radiative donor-acceptor pair recombination in TlInS2 single crystals A Aydinli, NM Gasanly, I Yilmaz, A Serpengüzel Semiconductor science and technology 14 (7), 599, 1999 | 56 | 1999 |
| Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals NS Yuksek, NM Gasanly, H Ozkan Semiconductor science and technology 18 (9), 834, 2003 | 53 | 2003 |
| Gd-doped ZnO nanoparticles: synthesis, structural and thermoluminescence properties M Isik, NM Gasanly Journal of Luminescence 207, 220-225, 2019 | 49 | 2019 |
| Vibrational Spectra of TlGaTe2, TlInTe2, and TlInSe2 Layer Single Crystals NM Gasanly, AF Goncharov, BM Dzhavadov, NN Melnik, VI Tagirov, ... physica status solidi (b) 97 (1), 367-377, 1980 | 49 | 1980 |
| Structural and temperature-dependent optical properties of thermally evaporated CdS thin films M Isik, HH Gullu, S Delice, M Parlak, NM Gasanly Materials Science in Semiconductor Processing 93, 148-152, 2019 | 44 | 2019 |
| Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals AF Qasrawi, NM Gasanly Materials research bulletin 39 (9), 1351-1357, 2004 | 44 | 2004 |
| Raman study of layer TlGaS2, β‐TlInS2, and TlGaSe2 crystals NM Gasanly, BN Mavrin, KE Sterin, VI Tagirov, ZD Khalafov physica status solidi (b) 86 (1), K49-K53, 1978 | 42 | 1978 |
| Hall effect, space-charge limited current and photoconductivity measurements on TlGaSe2 layered crystals AF Qasrawi, NM Gasanly Semiconductor science and technology 19 (3), 505, 2004 | 40 | 2004 |
| Vibrational Spectra of Spinel—Type Compound CuIn5S8 N Hasanlı, LG Gasanova, AZ Magomedov | 37 | 1992 |
| Coexistence of indirect and direct optical transitions, refractive, index and oscillator parameters in TlGaS2, TlGaSe2, and TlInS2 layered single crystals NM Gasanly Journal of the Korean Physical Society 57 (1), 164-168, 2010 | 36 | 2010 |
| Optoelectronic and electrical properties of TlGaS2 single crystal AF Qasrawi, NM Gasanly physica status solidi (a) 202 (13), 2501-2507, 2005 | 36 | 2005 |
| Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals AF Qasrawi, NM Gasanly Semiconductor science and technology 20 (5), 446, 2005 | 35 | 2005 |
| Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal NM Gasanly, A Serpengüzel, SMA Baten Journal of luminescence 86 (1), 39-43, 2000 | 35 | 2000 |
| Temperature dependence of the Raman-active phonon frequencies in indium sulfide NM Gasanly, H Özkan, A Aydinli, I Yilmaz Solid state communications 110 (4), 231-236, 1999 | 35 | 1999 |
