Fang-ming Jing 个人学术档案

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Hai-Ou LiUniversity of Science and Technology of China在 ustc.edu.cn 的电子邮件经过验证
HongWen JiangUCLA在 physics.ucla.edu 的电子邮件经过验证
Xin ZhangPostdoc, QuTech and Kavli Institute of Nanoscience, Delft University of Technology在 tudelft.nl 的电子邮件经过验证
Zhuo-Zhi ZhangUniversity of Science and Technology of China在 ustc.edu.cn 的电子邮件经过验证
Lan-Tian FengUniversity of Science and Technology of China在 mail.ustc.edu.cn 的电子邮件经过验证
Xifeng RenKey laboratory of quantum information, USTC在 ustc.edu.cn 的电子邮件经过验证
Ke WangPostdoc, UC Berkeley在 berkeley.edu 的电子邮件经过验证

Fang-ming Jing

在 mail.ustc.edu.cn 的电子邮件经过验证


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot X Zhang, RZ Hu, HO Li, FM Jing, Y Zhou, RL Ma, M Ni, G Luo, G Cao, ... Physical Review Letters 124 (25), 257701, 2020	44	2020
Transverse mode-encoded quantum gate on a silicon photonic chip LT Feng, M Zhang, X Xiong, D Liu, YJ Cheng, FM Jing, XZ Qi, Y Chen, ... Physical Review Letters 128 (6), 060501, 2022	21	2022
Gate‐controlled quantum dots based on 2D materials FM Jing, ZZ Zhang, GQ Qin, G Luo, G Cao, HO Li, XX Song, GP Guo Advanced Quantum Technologies 5 (6), 2100162, 2022	17	2022
Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing K Wang, HO Li, G Luo, X Zhang, FM Jing, RZ Hu, Y Zhou, H Liu, GL Wang, ... Europhysics Letters 130 (2), 27001, 2020	11	2020
Tunable p–n junction barriers in few-electron bilayer graphene quantum dots FM Jing, GQ Qin, ZZ Zhang, XX Song, GP Guo Applied Physics Letters 123 (18), 2023	1	2023
Improvement in the peak mobility of silicon metal-oxide-semiconductor field-effect transistors for quantum dots K Wang, HO Li, G Luo, X Zhang, FM Jing, RZ Hu, Y Zhou, H Liu, GL Wang, ... arXiv, arXiv: 1905.01581, 2019		2019

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