Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot X Zhang, RZ Hu, HO Li, FM Jing, Y Zhou, RL Ma, M Ni, G Luo, G Cao, ... Physical Review Letters 124 (25), 257701, 2020 | 44 | 2020 |
Transverse mode-encoded quantum gate on a silicon photonic chip LT Feng, M Zhang, X Xiong, D Liu, YJ Cheng, FM Jing, XZ Qi, Y Chen, ... Physical Review Letters 128 (6), 060501, 2022 | 21 | 2022 |
Gate‐controlled quantum dots based on 2D materials FM Jing, ZZ Zhang, GQ Qin, G Luo, G Cao, HO Li, XX Song, GP Guo Advanced Quantum Technologies 5 (6), 2100162, 2022 | 17 | 2022 |
Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing K Wang, HO Li, G Luo, X Zhang, FM Jing, RZ Hu, Y Zhou, H Liu, GL Wang, ... Europhysics Letters 130 (2), 27001, 2020 | 11 | 2020 |
Tunable p–n junction barriers in few-electron bilayer graphene quantum dots FM Jing, GQ Qin, ZZ Zhang, XX Song, GP Guo Applied Physics Letters 123 (18), 2023 | 1 | 2023 |
Improvement in the peak mobility of silicon metal-oxide-semiconductor field-effect transistors for quantum dots K Wang, HO Li, G Luo, X Zhang, FM Jing, RZ Hu, Y Zhou, H Liu, GL Wang, ... arXiv, arXiv: 1905.01581, 2019 | | 2019 |