| Characterization and modeling of temperature effects in 3-D NAND flash arrays—Part I: Polysilicon-induced variability D Resnati, A Mannara, G Nicosia, GM Paolucci, P Tessariol, AS Spinelli, ... IEEE Transactions on Electron Devices 65 (8), 3199-3206, 2018 | 61 | 2018 |
| Cycling-induced charge trapping/detrapping in Flash memories—Part I: Experimental evidence D Resnati, G Nicosia, GM Paolucci, A Visconti, CM Compagnoni IEEE Transactions on Electron Devices 63 (12), 4753-4760, 2016 | 32 | 2016 |
| Characterization and modeling of temperature effects in 3-D NAND Flash arrays—Part II: Random telegraph noise G Nicosia, A Mannara, D Resnati, GM Paolucci, P Tessariol, AS Spinelli, ... IEEE Transactions on Electron Devices 65 (8), 3207-3213, 2018 | 31 | 2018 |
| A semi-analytical model for macaroni MOSFETs with application to vertical Flash memories GM Paolucci, AS Spinelli, CM Compagnoni, P Tessariol IEEE Transactions on Electron Devices 63 (5), 1871-1876, 2016 | 28 | 2016 |
| Working principles of a DRAM cell based on gated-thyristor bistability H Mulaosmanovic, GM Paolucci, CM Compagnoni, N Castellani, ... IEEE Electron Device Letters 35 (9), 921-923, 2014 | 28 | 2014 |
| Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part I: Instabilities GM Paolucci, CM Compagnoni, C Miccoli, AS Spinelli, AL Lacaita, ... IEEE Transactions on Electron Devices 61 (8), 2802-2810, 2014 | 25 | 2014 |
| Temperature activation of the string current and its variability in 3-D NAND Flash arrays D Resnati, A Mannara, G Nicosia, GM Paolucci, P Tessariol, AL Lacaita, ... 2017 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2017 | 23 | 2017 |
| Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays C Miccoli, GM Paolucci, CM Compagnoni, AS Spinelli, A Goda 2015 IEEE International Reliability Physics Symposium, MY. 9.1-MY. 9.6, 2015 | 22 | 2015 |
| Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories C Miccoli, J Barber, CM Compagnoni, GM Paolucci, J Kessenich, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3B. 1.1-3B. 1.6, 2013 | 22 | 2013 |
| Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint—Part II: On-field operation and distributed-cycling effects GM Paolucci, CM Compagnoni, C Miccoli, AS Spinelli, AL Lacaita, ... IEEE Transactions on Electron Devices 61 (8), 2811-2819, 2014 | 21 | 2014 |
| Impact of temperature on the amplitude of RTN fluctuations in 3-D NAND Flash cells G Nicosia, A Mannara, D Resnati, GM Paolucci, P Tessariol, AL Lacaita, ... 2017 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2017 | 19 | 2017 |
| Fitting Cells Into a NarrowInterval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array GM Paolucci, CM Compagnoni, AS Spinelli, AL Lacaita, A Goda IEEE Transactions on Electron Devices 62 (5), 1491-1497, 2015 | 16 | 2015 |
| Cycling-induced charge trapping/detrapping in Flash memories—Part II: Modeling D Resnati, G Nicosia, GM Paolucci, A Visconti, CM Compagnoni IEEE Transactions on Electron Devices 63 (12), 4761-4768, 2016 | 15 | 2016 |
| Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors GM Paolucci, CM Compagnoni, N Castellani, G Carnevale, P Fantini, ... IEEE electron device letters 34 (5), 629-631, 2013 | 15 | 2013 |
| A single-electron analysis of NAND Flash memory programming G Nicosia, GM Paolucci, CM Compagnoni, D Resnati, C Miccoli, ... 2015 IEEE International Electron Devices Meeting (IEDM), 14.8. 1-14.8. 4, 2015 | 12 | 2015 |
| Investigation of the turn-ON of T-RAM cells under transient conditions H Mulaosmanovic, CM Compagnoni, N Castellani, GM Paolucci, ... IEEE Transactions on Electron Devices 62 (4), 1170-1176, 2015 | 12 | 2015 |
| First detection of single-electron charging of the floating gate of NAND flash memory cells CM Compagnoni, GM Paolucci, C Miccoli, AS Spinelli, AL Lacaita, ... IEEE Electron Device Letters 36 (2), 132-134, 2014 | 11 | 2014 |
| A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories GM Paolucci, CM Compagnoni, C Miccoli, M Bertuccio, S Beltrami, ... 2014 IEEE International Reliability Physics Symposium, 2E. 2.1-2E. 2.6, 2014 | 9 | 2014 |
| String current in decananometer NAND Flash arrays: A compact-modeling investigation GM Paolucci, C Miccoli, CM Compagnoni, AS Spinelli, AL Lacaita IEEE transactions on electron devices 59 (9), 2331-2337, 2012 | 9 | 2012 |
| A step ahead toward a new microscopic picture for charge trapping/detrapping in Flash memories D Resnati, CM Compagnoni, GM Paolucci, C Miccoli, J Barber, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 6C-3-1-6C-3-7, 2016 | 7 | 2016 |
Carmine MiccoliMicron Technology在 micron.com 的电子邮件经过验证
