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Battagiri Mallikarjuna Reddy
Battagiri Mallikarjuna Reddy
Senior software Engineer at Mercedes Benz R&D India
在 mercedes-benz.com 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
The dawn of Ga2O3 HEMTs for high power electronics-A review
R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Materials Science in Semiconductor Processing 119, 105216, 2020
1252020
A comprehensive review on tunnel field-effect transistor (TFET) based biosensors: recent advances and future prospects on device structure and sensitivity
NN Reddy, DK Panda
Silicon 13 (9), 3085-3100, 2021
802021
A comprehensive review on high electron mobility transistor (HEMT) Based biosensors: recent advances and future prospects and its comparison with Si-based biosensor
V Hemaja, DK Panda
Silicon, 1-14, 2021
382021
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of RF and Microwave Computer‐Aided Engineering 31 (4 …, 2021
302021
Nanowire gate all around-TFET-based biosensor by considering ambipolar transport
NN Reddy, DK Panda
Applied Physics A 127 (9), 1-9, 2021
272021
Next Generation 2D Material Molybdenum Disulfide (MoS2): Properties, Applications and Challenges
VP Kumar, DK Panda
ECS Journal of Solid State Science and Technology 11 (3), 033012, 2022
262022
Simulation study of dielectric modulated dual material gate TFET based biosensor by considering Ambipolar conduction
NN Reddy, DK Panda
Silicon 13 (12), 4545-4551, 2021
232021
Modeling and simulation of DC and microwave characteristics of AlInN (AlGaN)/AlN/GaN MOSHEMTs with different gate lengths
G Amarnath, DK Panda, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019
232019
Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT
G Amarnath, DK Panda, TR Lenka
International Journal of RF and Microwave Computer‐Aided Engineering 28 (2 …, 2018
232018
Rapid detection of biomolecules in a junction less tunnel field-effect transistor (JL-TFET) biosensor
RB Peesa, DK Panda
Silicon 14 (4), 1705-1711, 2022
222022
Analytical modelling for surface potential of dual material gate overlapped-on-drain TFET (DM-DMG-TFET) for label-free biosensing application
NN Reddy, DK Panda, R Saha
AEU-International Journal of Electronics and Communications 151, 154225, 2022
212022
A Comprehensive Review on FinFET in Terms of its Device Structure and Performance Matrices
MN Reddy, DK Panda
Silicon, 1-16, 2022
212022
RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness
P Raut, U Nanda, DK Panda
Physica Scripta, 2022
202022
Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study
DK Panda, R Singh, TR Lenka, TT Pham, RT Velpula, B Jain, HQT Bui, ...
IET Circuits, Devices & Systems 14 (7), 1018-1025, 2020
192020
Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications
DK Panda, TR Lenka
Journal of Semiconductors 38 (6), 064002, 2017
192017
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: Drain and pocket engineering technique
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022
182022
Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands
DK Panda, TR Lenka
IET Circuits, Devices & Systems 12 (6), 810-816, 2018
182018
Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor
NN Reddy, DK Panda
Journal of Micromechanics and Microengineering 32 (8), 085001, 2022
162022
Performance analysis of Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket
NN Reddy, DK Panda
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021
162021
Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT
DK Panda, TR Lenka
AEU-International Journal of Electronics and Communications 82, 467-473, 2017
162017
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