| SPICE compact modeling of bipolar/unipolar memristor switching governed by electrical thresholds F García-Redondo, RP Gowers, A Crespo-Yepes, M López-Vallejo, ... IEEE Transactions on Circuits and Systems I: Regular Papers 63 (8), 1255-1264, 2016 | 76 | 2016 |
| Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization G Vescio, A Crespo-Yepes, D Alonso, S Claramunt, M Porti, R Rodriguez, ... IEEE Electron Device Letters 38 (4), 457-460, 2017 | 33 | 2017 |
| Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages M Maestro, J Martin-Martinez, J Diaz, A Crespo-Yepes, MB Gonzalez, ... Microelectronic Engineering 147, 176-179, 2015 | 28 | 2015 |
| New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM M Maestro, J Diaz, A Crespo-Yepes, MB Gonzalez, J Martin-Martinez, ... Solid-State Electronics 115, 140-145, 2016 | 27 | 2016 |
| Power-efficient noise-induced reduction of ReRAM cell’s temporal variability effects V Ntinas, A Rubio, GC Sirakoulis, ES Aguilera, M Pedro, A Crespo-Yepes, ... IEEE Transactions on Circuits and Systems II: Express Briefs 68 (4), 1378-1382, 2020 | 26 | 2020 |
| Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization G Vescio, G Martin, A Crespo-Yepes, S Claramunt, D Alonso, ... ACS applied materials & interfaces 11 (26), 23659-23666, 2019 | 21 | 2019 |
| Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High-Gate Stacks A Crespo-Yepes, J Martin-Martinez, A Rothschild, R Rodriguez, M Nafria, ... IEEE electron device letters 31 (6), 543-545, 2010 | 21 | 2010 |
| MOSFET degradation dependence on input signal power in a RF power amplifier A Crespo-Yepes, E Barajas, J Martin-Martinez, D Mateo, X Aragones, ... Microelectronic Engineering 178, 289-292, 2017 | 19 | 2017 |
| Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses A Crespo-Yepes, J Martín-Martínez, R Rodríguez, M Nafria, X Aymerich Microelectronics Reliability 49 (9-11), 1024-1028, 2009 | 19 | 2009 |
| Aging in CMOS RF linear power amplifiers: An experimental study X Aragones, E Barajas, A Crespo-Yepes, D Mateo, R Rodriguez, ... IEEE Transactions on microwave theory and techniques 69 (2), 1453-1463, 2020 | 17 | 2020 |
| Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 A Grossi, C Zambelli, P Olivo, A Crespo-Yepes, J Martin-Martinez, ... Solid-State Electronics 128, 187-193, 2017 | 15 | 2017 |
| Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs A Crespo-Yepes, J Martin-Martinez, A Rothschild, R Rodriguez, M Nafria, ... Solid-state electronics 65, 157-162, 2011 | 14 | 2011 |
| Experimental verification of memristor-based material implication NAND operation M Maestro-Izquierdo, J Martin-Martinez, AC Yepes, M Escudero, ... IEEE Transactions on Emerging Topics in Computing 7 (4), 545-552, 2017 | 11 | 2017 |
| DC characterization and fast small-signal parameter extraction of organic thin film transistors with different geometries A Arnal, A Crespo-Yepes, E Ramon, L Teres, R Rodríguez, M Nafria IEEE Electron Device Letters 41 (10), 1512-1515, 2020 | 9 | 2020 |
| Aging in CMOS RF linear power amplifiers: experimental comparison and modeling X Aragones, D Mateo, E Barajas, A Crespo-Yepes, R Rodríguez, ... 2019 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2019 | 8 | 2019 |
| Design of a Broadband CMOS RF Power Amplifier to establish device-circuit aging correlations E Barajas, D Mateo, X Aragones, A Crespo-Yepes, R Rodriguez, ... 2017 International Conference of Microelectronic Test Structures (ICMTS), 1-3, 2017 | 8 | 2017 |
| Beneficial role of noise in hf-based memristors R Rodriguez, J Martin-Martinez, E Salvador, A Crespo-Yepes, E Miranda, ... 2022 IEEE International Symposium on Circuits and Systems (ISCAS), 975-979, 2022 | 7 | 2022 |
| Experimental Time Evolution Study of the HfO2-Based IMPLY Gate Operation M Maestro-Izquierdo, J Martin-Martinez, AC Yepes, M Escudero, ... IEEE Transactions on Electron Devices 65 (2), 404-410, 2018 | 7 | 2018 |
| Intra-device statistical parameters in variability-aware modelling of resistive switching devices A Crespo-Yepes, J Martin-Martinez, I Rama, M Maestro, R Rodriguez, ... 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | 7 | 2016 |
| Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties A Ruiz, S Claramunt, A Crespo-Yepes, M Porti, M Nafria, H Xu, C Liu, ... Solid-State Electronics 186, 108061, 2021 | 6 | 2021 |
