| Investigation of diode-pumped, self-frequency doubled RGB lasers from Nd: YCOB crystals Q Ye, L Shah, J Eichenholz, D Hammons, R Peale, M Richardson, A Chin, ... Optics communications 164 (1-3), 33-37, 1999 | 91 | 1999 |
| Scaling of longitudinally diode-pumped self-frequency-doubling Nd: YCOB lasers DA Hammons, M Richardson, BHT Chai, AK Chin, R Jollay IEEE journal of quantum electronics 36 (8), 991-999, 2000 | 66 | 2000 |
| Spatially resolved cathodoluminescence study of semi-insulating GaAs substrates AK Chin, AR Von Neida, R Caruso Journal of the Electrochemical Society 129 (10), 2386, 1982 | 62 | 1982 |
| The characterization of highly‐zinc‐doped InP crystals S Mahajan, WA Bonner, AK Chin, DC Miller Applied Physics Letters 35 (2), 165-168, 1979 | 56 | 1979 |
| Transmission cathodoluminescence: A new SEM technique to study defects in bulk semiconductor samples AK Chin, H Temkin, RJ Roedel Applied Physics Letters 34 (7), 476-478, 1979 | 46 | 1979 |
| Effects of thermal annealing on semi‐insulating undoped GaAs grown by the liquid‐encapsulated Czochralski technique AK Chin, I Camlibel, R Caruso, MSS Young, AR Von Neida Journal of applied physics 57 (6), 2203-2209, 1985 | 44 | 1985 |
| Multiple wavelength light emitting devices I Camlibel, AK Chin, BH Chin US Patent 4,605,942, 1986 | 43 | 1986 |
| Metallurgical Behavior of Gold‐Based Ohmic Contacts to the InP/InGaAsP Material System I Camlibel, AK Chin, F Ermanis, MA DiGiuseppe, JA Lourenco, ... Journal of The Electrochemical Society 129 (11), 2585, 1982 | 41 | 1982 |
| Uniformity characterization of semi‐insulating GaAs by cathodoluminescence imaging AK Chin, R Caruso, MSS Young, AR Von Neida Applied physics letters 45 (5), 552-554, 1984 | 40 | 1984 |
| Cathodoluminescence evaluation of dark spot defects in InP/InGaAsP light‐emitting diodes AK Chin, CL Zipfel, S Mahajan, F Ermanis, MA DiGiuseppe Applied Physics Letters 41 (6), 555-557, 1982 | 39 | 1982 |
| The status of current understanding of InP and InGaAsP materials S Mahajan, AK Chin Journal of Crystal Growth 54 (1), 138-149, 1981 | 39 | 1981 |
| Temperature profile along the cavity axis of high power quantum well lasers during operation FP Dabkowski, AK Chin, P Gavrilovic, S Alie, DM Beyea Applied physics letters 64 (1), 13-15, 1994 | 34 | 1994 |
| Direct evidence for the role of gold migration in the formation of dark‐spot defects in 1.3‐μm InP/InGaAsP light‐emitting diodes AK Chin, CL Zipfel, M Geva, I Camlibel, P Skeath, BH Chin Applied physics letters 45 (1), 37-39, 1984 | 33 | 1984 |
| Formation of p+‐p−‐n− junctions in InP by Cd diffusion AK Chin, BV Dutt, H Temkin, WA Bonner, DD Roccasecca Applied Physics Letters 36 (11), 924-926, 1980 | 33 | 1980 |
| InGaAsP LEDs for 1.3‐μm Optical Transmission H Temkin, CL Zipfel, MA Digiuseppe, AK Chin, VG Keramidas, RH Saul Bell System Technical Journal 62 (1), 1-24, 1983 | 30 | 1983 |
| Effect of multiple scattering on the compton profile of be WC Phillips, AK Chin Philosophical Magazine 27 (1), 87-93, 1973 | 30 | 1973 |
| Higher brightness laser diodes with smaller slow axis divergence W Sun, R Pathak, G Campbell, H Eppich, JH Jacob, A Chin, J Fryer High-Power Diode Laser Technology and Applications XI 8605, 86-94, 2013 | 29 | 2013 |
| Failure mode analysis of planar zinc‐diffused In0.53Ga0.47As p‐i‐n photodiodes AK Chin, FS Chen, F Ermanis Journal of applied physics 55 (6), 1596-1606, 1984 | 27 | 1984 |
| Light‐current characteristics of InGaAsP light emitting diodes H Temkin, AK Chin, MA DiGiuseppe, VG Keramidas Applied Physics Letters 39 (5), 405-407, 1981 | 27 | 1981 |
| Fault protection of broad-area laser diodes JH Jacob, R Petr, MA Jaspan, SD Swartz, MT Knapczyk, AM Flusberg, ... High-Power Diode Laser Technology and Applications VII 7198, 324-333, 2009 | 26 | 2009 |
