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Jung-Chien Cheng
Jung-Chien Cheng
Institute of Electronics, NCTU
在 nctu.edu.tw 的电子邮件经过验证
标题
引用次数
引用次数
年份
Schottky barrier height modification of metal/4H-SiC contact using ultrathin TiO2 insertion method
BY Tsui, JC Cheng, LS Lee, CY Lee, MJ Tsai
Japanese Journal of Applied Physics 53 (4S), 04EP10, 2014
232014
Effects of rapid thermal annealing on Ar inductively coupled plasma-treated n-type 4H-SiC Schottky and ohmic contacts
JC Cheng, BY Tsui
IEEE Transactions on Electron Devices 65 (9), 3739-3745, 2018
152018
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
BY Tsui, JC Cheng, CT Yen, CY Lee
Solid-State Electronics 133, 83-87, 2017
152017
Reduction of specific contact resistance on n-type implanted 4H-SiC through argon inductively coupled plasma treatment and post-metal deposition annealing
JC Cheng, BY Tsui
IEEE Electron Device Letters 38 (12), 1700-1703, 2017
102017
Effect of ion-implantation temperature on contact resistance of metal/n-type 4H-SiC with Ar plasma treatment
BY Tsui, JC Cheng
IEEE Transactions on Electron Devices 66 (3), 1464-1467, 2019
62019
Multi-gate non-volatile memories with nanowires as charge storage material
BY Tsui, PY Wang, TY Chen, JC Cheng
Microelectronics Reliability 50 (5), 603-606, 2010
62010
Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology
JC Cheng, JE Lee, BY Tsui
Solid-State Electronics 171, 107834, 2020
32020
Failure analysis on TiAl metallization process for ohmic contact on 4H-SiC pMOSFET
CL Hung, JC Cheng, BY Tsui
2019 IEEE 26th International Symposium on Physical and Failure Analysis of …, 2019
32019
High voltage gain 4H-SiC CMOS technology featuring LOCal oxidation of SiC (LOCOSiC) isolation and balanced gate dielectric
BY Tsui, CL Hung, YR Jhuang, YT Huang, JC Cheng, FH Lu, YT Shih, ...
2021 International Symposium on VLSI Technology, Systems and Applications …, 2021
22021
Schottky Barrier Height Modulation of the Metal/4H-SiC Contact by Ultra-Thin Dielectric Insertion Technique
BY Tsui, JC Cheng, LS Lee, CY Lee, MJ Tsai
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