| Why does wurtzite form in nanowires of III-V zinc blende semiconductors? F Glas, JC Harmand, G Patriarche Physical review letters 99 (14), 146101, 2007 | 935 | 2007 |
| Growth kinetics and crystal structure of semiconductor nanowires VG Dubrovskii, NV Sibirev, JC Harmand, F Glas Physical Review B—Condensed Matter and Materials Physics 78 (23), 235301, 2008 | 399 | 2008 |
| Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth JC Harmand, G Patriarche, N Péré-Laperne, MN Merat-Combes, ... Applied Physics Letters 87 (20), 2005 | 360 | 2005 |
| Crystal phase quantum dots N Akopian, G Patriarche, L Liu, JC Harmand, V Zwiller Nano letters 10 (4), 1198-1201, 2010 | 301 | 2010 |
| Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand, VM Ustinov Physical Review E—Statistical, Nonlinear, and Soft Matter Physics 73 (2 …, 2006 | 252 | 2006 |
| Predictive modeling of self-catalyzed III-V nanowire growth F Glas, MR Ramdani, G Patriarche, JC Harmand Physical Review B—Condensed Matter and Materials Physics 88 (19), 195304, 2013 | 221 | 2013 |
| Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ... Journal of Applied Physics 102 (9), 2007 | 189 | 2007 |
| New mode of vapor− liquid− solid nanowire growth VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner Nano letters 11 (3), 1247-1253, 2011 | 177 | 2011 |
| Arsenic pathways in self-catalyzed growth of GaAs nanowires MR Ramdani, JC Harmand, F Glas, G Patriarche, L Travers Crystal Growth & Design 13 (1), 91-96, 2013 | 175 | 2013 |
| Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates GE Cirlin, VG Dubrovskii, IP Soshnikov, NV Sibirev, YB Samsonenko, ... physica status solidi (RRL)–Rapid Research Letters 3 (4), 112-114, 2009 | 174 | 2009 |
| Growth and characterization of InP nanowires with InAsP insertions M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ... Nano letters 7 (6), 1500-1504, 2007 | 172 | 2007 |
| Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ... Nanotechnology 18 (38), 385306, 2007 | 165 | 2007 |
| Atomic step flow on a nanofacet JC Harmand, G Patriarche, F Glas, F Panciera, I Florea, JL Maurice, ... Physical review letters 121 (16), 166101, 2018 | 162 | 2018 |
| Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs R Teissier, D Sicault, JC Harmand, G Ungaro, G Le Roux, L Largeau Journal of Applied Physics 89 (10), 5473-5477, 2001 | 159 | 2001 |
| Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy M Tchernycheva, JC Harmand, G Patriarche, L Travers, GE Cirlin Nanotechnology 17 (16), 4025, 2006 | 150 | 2006 |
| Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN JC Harmand, G Ungaro, L Largeau, G Le Roux Applied Physics Letters 77 (16), 2482-2484, 2000 | 146 | 2000 |
| Nucleation antibunching in catalyst-assisted nanowire growth F Glas, JC Harmand, G Patriarche Physical review letters 104 (13), 135501, 2010 | 140 | 2010 |
| Epitaxy of GaN nanowires on graphene V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ... Nano letters 16 (8), 4895-4902, 2016 | 131 | 2016 |
| GaNAsSb: How does it compare with other dilute III–V-nitride alloys? JC Harmand, A Caliman, EVK Rao, L Largeau, J Ramos, R Teissier, ... Semiconductor science and technology 17 (8), 778, 2002 | 130 | 2002 |
| Role of nonlinear effects in nanowire growth and crystal phase VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ... Physical Review B—Condensed Matter and Materials Physics 80 (20), 205305, 2009 | 125 | 2009 |
