| Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys Applied physics letters 83 (26), 5419-5421, 2003 | 343 | 2003 |
| Microstructure of selective laser melted CM247LC nickel-based superalloy and its evolution through heat treatment VD Divya, R Muñoz-Moreno, O Messé, JS Barnard, S Baker, T Illston, ... Materials Characterization 114, 62-74, 2016 | 291 | 2016 |
| Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ... Journal of applied physics 97 (10), 2005 | 271 | 2005 |
| Grain-boundary precipitation in Allvac 718Plus EJ Pickering, H Mathur, A Bhowmik, O Messé, JS Barnard, MC Hardy, ... Acta Materialia 60 (6-7), 2757-2769, 2012 | 217 | 2012 |
| Threading plasmonic nanoparticle strings with light LO Herrmann, VK Valev, C Tserkezis, JS Barnard, S Kasera, ... Nature Communications 5 (1), 4568, 2014 | 191 | 2014 |
| High-resolution three-dimensional imaging of dislocations JS Barnard, J Sharp, JR Tong, PA Midgley Science 313 (5785), 319-319, 2006 | 178 | 2006 |
| On the origin of threading dislocations in GaN films MA Moram, CS Ghedia, DVS Rao, JS Barnard, Y Zhang, MJ Kappers, ... Journal of Applied Physics 106 (7), 2009 | 156 | 2009 |
| Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering ME Vickers, MJ Kappers, TM Smeeton, EJ Thrush, JS Barnard, ... Journal of applied physics 94 (3), 1565-1574, 2003 | 150 | 2003 |
| Deformation of silicon–insights from microcompression testing at 25–500 C S Korte, JS Barnard, RJ Stearn, WJ Clegg International Journal of Plasticity 27 (11), 1853-1866, 2011 | 149 | 2011 |
| Growth and characterisation of GaN with reduced dislocation density R Datta, MJ Kappers, ME Vickers, JS Barnard, CJ Humphreys Superlattices and Microstructures 36 (4-6), 393-401, 2004 | 114 | 2004 |
| Segregation assisted microtwinning during creep of a polycrystalline L12-hardened Co-base superalloy LP Freund, OMDM Messé, JS Barnard, M Göken, S Neumeier, CMF Rae Acta Materialia 123, 295-304, 2017 | 109 | 2017 |
| Organization of nanoparticles in polymer brushes R Oren, Z Liang, JS Barnard, SC Warren, U Wiesner, WTS Huck Journal of the American Chemical Society 131 (5), 1670-1671, 2009 | 89 | 2009 |
| The Chemical Application of High‐Resolution Electron Tomography: Bright Field or Dark Field? JM Thomas, PA Midgley, TJV Yates, JS Barnard, R Raja, I Arslan, ... Angewandte Chemie International Edition 43 (48), 6745-6747, 2004 | 85 | 2004 |
| On the precipitation of delta phase in ALLVAC® 718Plus OM Messé, JS Barnard, EJ Pickering, PA Midgley, CMF Rae Philosophical Magazine 94 (10), 1132-1152, 2014 | 83 | 2014 |
| Growth and characterisation of semi-polar (1l2¯ 2) InGaN/GaN MQW structures MJ Kappers, JL Hollander, C McAleese, CF Johnston, RF Broom, ... Journal of crystal growth 300 (1), 155-159, 2007 | 81 | 2007 |
| Functional conductive nanomaterials via polymerisation in nano-channels: PEDOT in a MOF T Wang, M Farajollahi, S Henke, T Zhu, SR Bajpe, S Sun, JS Barnard, ... Materials Horizons 4 (1), 64-71, 2017 | 80 | 2017 |
| Atom probe tomography assessment of the impact of electron beam exposure on InxGa1− xN/GaN quantum wells SE Bennett, DW Saxey, MJ Kappers, JS Barnard, CJ Humphreys, ... Applied Physics Letters 99 (2), 2011 | 64 | 2011 |
| The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy. TM Smeeton, CJ Humphreys, JS Barnard, MJ Kappers Journal of materials science 41 (9), 2006 | 57 | 2006 |
| Three-dimensional analysis of dislocation networks in GaN using weak-beam dark-field electron tomography JS Barnard, J Sharp, JR Tong, PA Midgley Philosophical Magazine 86 (29-31), 4901-4922, 2006 | 54 | 2006 |
| Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ... physica status solidi (c), 2389-2392, 2003 | 53 | 2003 |
