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Umut Arslan
Umut Arslan
在 intel.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V …
P Jain, U Arslan, M Sekhar, BC Lin, L Wei, T Sahu, J Alzate-Vinasco, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 212-214, 2019
1562019
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
1562018
13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique
L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019
1432019
2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications
JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ...
2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019
1092019
Non-volatile RRAM embedded into 22FFL FinFET technology
O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ...
2019 Symposium on VLSI Technology, T230-T231, 2019
732019
CMOS-MEMS resonant RF mixer-filters
F Chen, J Brotz, U Arslan, CC Lo, T Mukherjee, GK Fedder
18th IEEE International Conference on Micro Electro Mechanical Systems, 2005 …, 2005
732005
13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology
F Hamzaoglu, U Arslan, N Bisnik, S Ghosh, MB Lal, N Lindert, ...
2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014
692014
Variation-tolerant SRAM sense-amplifier timing using configurable replica bitlines
U Arslan, MP McCartney, M Bhargava, X Li, K Mai, LT Pileggi
2008 IEEE Custom Integrated Circuits Conference, 415-418, 2008
522008
A 1 gb 2 ghz 128 gb/s bandwidth embedded dram in 22 nm tri-gate cmos technology
F Hamzaoglu, U Arslan, N Bisnik, S Ghosh, MB Lal, N Lindert, ...
IEEE Journal of Solid-State Circuits 50 (1), 150-157, 2014
392014
Retention time optimization for eDRAM in 22nm tri-gate CMOS technology
Y Wang, U Arslan, N Bisnik, R Brain, S Ghosh, F Hamzaoglu, N Lindert, ...
2013 IEEE International Electron Devices Meeting, 9.5. 1-9.5. 4, 2013
212013
Two transistor memory cell using stacked thin-film transistors
AA Sharma, JG Alzate-Vinasco, F Hamzaoglu, B Sell, PH Wang, VH Le, ...
US Patent App. 16/133,655, 2020
202020
Apparatus for boosting source-line voltage to reduce leakage in resistive memories
U Arslan, C Dray
US Patent 9,418,761, 2016
122016
Efficient statistical analysis of read timing failures in SRAM circuits
S Yaldiz, U Arslan, X Li, L Pileggi
2009 10th International Symposium on Quality Electronic Design, 617-621, 2009
122009
2nd generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology
M Meterelliyoz, FH Al-amoody, U Arslan, F Hamzaoglu, L Hood, M Lal, ...
2014 Symposium on VLSI Circuits Digest of Technical Papers, 1-2, 2014
112014
IEEE Int. Electron Devices Meet
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
the press); https://ieee-iedm. org/program, 2018
92018
Reconfigurable MEMS-enabled RF circuits for spectrum sensing
T Mukherjee, GK Fedder, H Akyol, U Arslan, J Brotz, F Chen, A Jajoo, ...
Government Microcircuit Applications and Critical Technology Conference, 2005
92005
Memory cells based on vertical thin-film transistors
JGA VINASCO, AA Sharma, F Hamzaoglu, B Sell, PH Wang, VH Le, ...
US Patent 11,462,541, 2022
72022
M, Mainuddin, M
O Golonzka, J Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
Meterelliyoz, P. Nguyen, D. Nikonov, K. O'brien, JO Donnell, K. Oguz, D …, 0
7
Capacitor separations in dielectric layers
TW LaJoie, AA Sharma, VH Le, CJ Ku, PH Wang, JT Kavalieros, B Sell, ...
US Patent 11,610,894, 2023
62023
Apparatuses and methods to control operations performed on resistive memory cells
J Pulkit, U Arslan, F Hamzaoglu
US Patent 10,515,697, 2019
62019
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