| Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding J Kang, X Yu, M Takenaka, S Takagi Materials Science in Semiconductor Processing 42, 259-263, 2016 | 67 | 2016 |
| Aggressive EOT Scaling of Ge pMOSFETs With HfO2/AlOx/GeOx Gate-Stacks Fabricated by Ozone Postoxidation R Zhang, X Tang, X Yu, J Li, Y Zhao IEEE Electron Device Letters 37 (7), 831-834, 2016 | 57 | 2016 |
| HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability Y Peng, W Xiao, Y Liu, C Jin, X Deng, Y Zhang, F Liu, Y Zheng, Y Cheng, ... IEEE Electron Device Letters 43 (2), 216-219, 2021 | 55 | 2021 |
| Experimental study on carrier transport properties in extremely-thin body Ge-on-insulator (GOI) p-MOSFETs with GOI thickness down to 2 nm X Yu, J Kang, M Takenaka, S Takagi 2015 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2015 | 54 | 2015 |
| Ultra fast (< 1 ns) electrical characterization of self-heating effect and its impact on hot carrier injection in 14nm FinFETs Y Qu, X Lin, J Li, R Cheng, X Yu, Z Zheng, J Lu, B Chen, Y Zhao 2017 IEEE International Electron Devices Meeting (IEDM), 39.2. 1-39.2. 4, 2017 | 52 | 2017 |
| Impact of Plasma Postoxidation Temperature on the Electrical Properties of pMOSFETs and nMOSFETs R Zhang, JC Lin, X Yu, M Takenaka, S Takagi IEEE Transactions on Electron Devices 61 (2), 416-422, 2014 | 45 | 2014 |
| Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation R Zhang, X Yu, M Takenaka, S Takagi IEEE Transactions on Electron Devices 61 (7), 2316-2323, 2014 | 41 | 2014 |
| Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films J Chen, C Jin, X Yu, X Jia, Y Peng, Y Liu, B Chen, R Cheng, G Han IEEE Transactions on Electron Devices 69 (9), 5297-5301, 2022 | 40 | 2022 |
| The past and future of multi-gate field-effect transistors: Process challenges and reliability issues Y Sun, X Yu, R Zhang, B Chen, R Cheng Journal of Semiconductors 42 (2), 023102, 2021 | 32 | 2021 |
| Demonstration of ultra-thin buried oxide germanium-on-insulator MOSFETs by direct wafer bonding and polishing techniques Z Zheng, X Yu, M Xie, R Cheng, R Zhang, Y Zhao Applied Physics Letters 109 (2), 2016 | 29 | 2016 |
| Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation R Zhang, X Yu, M Takenaka, S Takagi IEEE Transactions on Electron Devices 61 (11), 3668-3675, 2014 | 27 | 2014 |
| Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation M Ke, X Yu, C Chang, M Takenaka, S Takagi Applied Physics Letters 109 (3), 2016 | 26 | 2016 |
| Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut™ GeOI substrates X Yu, J Kang, R Zhang, M Takenaka, S Takagi Solid-State Electronics 115, 120-125, 2016 | 26 | 2016 |
| Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs X Yu, J Kang, R Zhang, WL Cai, M Takenaka, S Takagi Microelectronic Engineering 147, 196-200, 2015 | 25 | 2015 |
| Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces R Zhang, JC Lin, X Yu, M Takenaka, S Takagi Microelectronic engineering 109, 97-100, 2013 | 23 | 2013 |
| Physical origin of the endurance improvement for HfO2-ZrO2 superlattice ferroelectric film Z Gong, J Chen, Y Peng, Y Liu, X Yu, G Han Applied Physics Letters 121 (24), 2022 | 22 | 2022 |
| Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation M Ke, X Yu, R Zhang, J Kang, C Chang, M Takenaka, S Takagi Microelectronic Engineering 147, 244-248, 2015 | 22 | 2015 |
| Real-Time Polarization Switch Characterization of HfZrO4 for Negative Capacitance Field-Effect Transistor Applications Z Zheng, R Cheng, Y Qu, X Yu, W Liu, Z Chen, B Chen, Q Sun, DW Zhang, ... IEEE Electron Device Letters 39 (9), 1469-1472, 2018 | 19 | 2018 |
| A Fast Measurement (FVM) Technique for NBTI Behavior Characterization X Yu, R Cheng, W Liu, Y Qu, J Han, B Chen, J Lu, Y Zhao IEEE Electron Device Letters 39 (2), 172-175, 2017 | 19 | 2017 |
| Analog Synapses Based on Nonvolatile FETs With Amorphous ZrO2 Dielectric for Spiking Neural Network Applications H Liu, J Li, G Wang, J Chen, X Yu, Y Liu, C Jin, S Wang, Y Hao, G Han IEEE Transactions on Electron Devices 69 (3), 1028-1033, 2022 | 18 | 2022 |
Genquan HanXidian University在 xidian.edu.cn 的电子邮件经过验证
