| High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ... Optics express 28 (7), 10280-10293, 2020 | 86 | 2020 |
| High performance flexible visible-blind ultraviolet photodetectors with two-dimensional electron gas based on unconventional release strategy YY Zhang, YX Zheng, JY Lai, JH Seo, KH Lee, CS Tan, S An, SH Shin, ... ACS nano 15 (5), 8386-8396, 2021 | 44 | 2021 |
| Dark current analysis of germanium-on-insulator vertical pin photodetectors with varying threading dislocation density B Son*, Y Lin, KH Lee, Q Chen, CS Tan Journal of Applied Physics 127 (20), 203105, 2020 | 44 | 2020 |
| High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO x surface passivation B Son*, Y Lin, KH Lee, Y Wang, S Wu, CS Tan* Optics Express 28 (16), 23978-23990, 2020 | 35 | 2020 |
| Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications S Ghosh, KC Lin, CH Tsai, H Kumar, Q Chen, L Zhang, B Son, CS Tan, ... Micromachines 11 (9), 795, 2020 | 32 | 2020 |
| Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors S Ghosh, KC Lin, CH Tsai, KH Lee, Q Chen, B Son, B Mukhopadhyay, ... Optics Express 28 (16), 23739-23747, 2020 | 29 | 2020 |
| Direct chemisorption-assisted nanotransfer printing with wafer-scale uniformity and controllability ZJ Zhao†, SH Shin†, SY Lee, B Son, Y Liao, S Hwang, S Jeon, H Kang, ... ACS nano 16 (1), 378-385, 2022 | 16 | 2022 |
| Sub-mA/cm 2 Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate Y Lin†*, B Son†, KH Lee, J Michel, CS Tan* IEEE Transactions on Electron Devices 68 (4), 1730-1737, 2021 | 16 | 2021 |
| Surface plasmon enhanced GeSn photodetectors operating at 2 µm H Zhou, L Zhang, J Tong, S Wu*, B Son, Q Chen, DH Zhang, CS Tan Optics express 29 (6), 8498-8509, 2021 | 14 | 2021 |
| Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth Y Lin*, KH Lee, B Son, CS Tan* Optics Express 29 (3), 2940-2952, 2021 | 14 | 2021 |
| A highly ordered and damage-free Ge inverted pyramid array structure for broadband antireflection in the mid-infrared SH Shin†, Y Liao†, B Son, ZJ Zhao, JH Jeong, CS Tan, M Kim* Journal of Materials Chemistry C 9 (31), 9884-9891, 2021 | 14 | 2021 |
| Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improved responsivity and specific detectivity at 1,550 nm B Son*, H Zhou, Y Lin, KH Lee, CS Tan* Optics Express 29 (11), 16520-16533, 2021 | 13 | 2021 |
| Efficient Avalanche Photodiodes with a WSe2/MoS2 Heterostructure via Two-Photon Absorption B Son, Y Wang, M Luo, K Lu, Y Kim, HJ Joo, Y Yi, C Wang, QJ Wang, ... Nano Letters 22 (23), 9516-9522, 2022 | 11 | 2022 |
| Insights into the origins of guided microtrenches and Microholes/rings from Sn segregation in germanium–tin epilayers S Wu*, L Zhang, B Son, Q Chen, H Zhou, CS Tan* The Journal of Physical Chemistry C 124 (37), 20035-20045, 2020 | 10 | 2020 |
| Growth and characterizations of GeSn films with high Sn composition by chemical vapor deposition (CVD) using Ge2H6 and SnCl4 for mid-IR applications L Zhang, Q Chen, S Wu, BK Son, KH Lee, GY Chong, CS Tan ECS Transactions 98 (5), 91, 2020 | 8 | 2020 |
| The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source Q Chen*, L Zhang, H Zhou, W Li, BK Son, CS Tan* Semiconductor Science and Technology 35 (2), 025008, 2020 | 8 | 2020 |
| Metal-semiconductor-metal Photodetectors on a GeSn-on-insulator Platform for 2 µm Applications B Son*, Y Lin, KH Lee, J Margetis, D Kohen, J Tolle, CS Tan* IEEE Photonics Journal 14 (3), 1-6, 2022 | 7 | 2022 |
| Grating and hole-array enhanced germanium lateral pin photodetectors on an insulator platform H Zhou, Q Chen, S Wu*, L Zhang, X Guo, B Son, CS Tan* Optics Express 30 (4), 4706-4717, 2022 | 7 | 2022 |
| Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm S Wu, B Son, L Zhang, Q Chen, H Zhou, SCK Goh, CS Tan Journal of Alloys and Compounds 872, 159696, 2021 | 6 | 2021 |
| Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform BK Son, Y Lin, W Li, KH Lee, J Margetis, D Kohen, J Tolle, L Zhang, ... Optical Components and Materials XVI 10914, 244-250, 2019 | 6 | 2019 |
Chuan Seng TanProfessor, Nanyang Technological University, Singapore | IEEE Fellow | IMAPS Fellow在 ntu.edu.sg 的电子邮件经过验证
