Advanced Terahertz Frequency-Domain Ellipsometry Instrumentation for In Situ and Ex Situ Applications P Kühne, N Armakavicius, V Stanishev, CM Herzinger, M Schubert, ... IEEE Transactions on Terahertz Science and Technology 8 (3), 257-270, 2018 | 58 | 2018 |
Strong plasmon–exciton coupling with directional absorption features in optically thin hybrid nanohole metasurfaces ESH Kang, S Chen, S Sardar, D Tordera, N Armakavicius, V Darakchieva, ... Acs Photonics 5 (10), 4046-4055, 2018 | 47 | 2018 |
Properties of two‐dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity‐enhanced THz optical Hall effect N Armakavicius, JT Chen, T Hofmann, S Knight, P Kühne, D Nilsson, ... physica status solidi (c) 13 (5‐6), 369-373, 2016 | 27 | 2016 |
Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies N Armakavicius, C Bouhafs, V Stanishev, P Kühne, R Yakimova, S Knight, ... Applied Surface Science 421, 357-360, 2017 | 14 | 2017 |
Electron effective mass in In0. 33Ga0. 67N determined by mid-infrared optical Hall effect N Armakavicius, V Stanishev, S Knight, P Kühne, M Schubert, ... Applied Physics Letters 112 (8), 2018 | 10 | 2018 |
Enhancement of 2DEG effective mass in AlN/Al0. 78Ga0. 22N high electron mobility transistor structure determined by THz optical Hall effect P Kühne, N Armakavicius, A Papamichail, DQ Tran, V Stanishev, ... Applied Physics Letters 120 (25), 2022 | 6 | 2022 |
Critical view on buffer layer formation and monolayer graphene properties in high-temperature sublimation V Stanishev, N Armakavicius, C Bouhafs, C Coletti, P Kühne, IG Ivanov, ... Applied Sciences 11 (4), 1891, 2021 | 5 | 2021 |
Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect N Armakavicius, P Kühne, J Eriksson, C Bouhafs, V Stanishev, IG Ivanov, ... Carbon 172, 248-259, 2021 | 5 | 2021 |
Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect N Armakavicius, S Knight, P Kühne, V Stanishev, DQ Tran, S Richter, ... APL Materials 12 (2), 2024 | 4 | 2024 |
Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC I Persson, N Armakavicius, C Bouhafs, V Stanishev, P Kühne, T Hofmann, ... APL Materials 8 (1), 2020 | 4 | 2020 |
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1− xN/GaN heterostructures (0.07≤ x≤ 0.42) S Knight, S Richter, A Papamichail, P Kühne, N Armakavicius, S Guo, ... Journal of Applied Physics 134 (18), 2023 | 3 | 2023 |
Low Al-content n-type AlxGa1− xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition V Stanishev, N Armakavicius, D Gogova, M Nawaz, N Rorsman, ... Vacuum 217, 112481, 2023 | 3 | 2023 |
Stealth technology-based Terahertz frequency-domain ellipsometry instrumentation P Kühne, V Stanishev, N Armakavicius, M Schubert, V Darakchieva arXiv preprint arXiv:1712.05283, 2017 | 2 | 2017 |
Self-powered, Multi-angle Gas Flow Sensing Based on Photovoltaics with Porous Graphite Electrodes H Zhang, H Meng, X Xing, N Armakavicius Sensors and Actuators A: Physical, 115754, 2024 | | 2024 |
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect N Armakavicius, P Kühne, A Papamichail, H Zhang, S Knight, A Persson, ... Materials 17 (13), 3343, 2024 | | 2024 |
Feasibility of Melting NbC Using Electron Beam Powder Bed Fusion K Wennersten, J Xu, N Armakavicius, A Wiberg, H Nadali Najafabadi, ... Advanced Engineering Materials 26 (6), 2301388, 2024 | | 2024 |
Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect N Armakavicius Linköping University Electronic Press, 2019 | | 2019 |
Electron effective mass in unintentionally doped InGaN determined by mid-infrared optical Hall effect N Armakavicius, V Stanishev, S Knight, P Kühne, M Schubert, ... arXiv preprint arXiv:1712.01738, 2017 | | 2017 |
Study of novel electronic materials by mid-infrared and terahertz optical Hall effect N Armakavicius Linköping University Electronic Press, 2017 | | 2017 |
In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene MSVD Sean Knight, Tino Hofmann, Chamseddine Bouhafs, Nerijus Armakavicius ... Scientific Reports 7 (5151), 2017 | | 2017 |