A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator TH Kil, S Kim, DH Jeong, DM Geum, S Lee, SJ Jung, S Kim, C Park, ... Nano energy 37, 242-247, 2017 | 108 | 2017 |
Ultra-high-throughput production of III-V/Si wafer for electronic and photonic applications DM Geum, MS Park, JY Lim, HD Yang, JD Song, CZ Kim, E Yoon, SH Kim, ... Scientific reports 6 (1), 20610, 2016 | 85 | 2016 |
Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation DM Geum, SK Kim, CM Kang, SH Moon, J Kyhm, JH Han, DS Lee, ... Nanoscale 11 (48), 23139-23148, 2019 | 53 | 2019 |
Bioinspired photoresponsive single transistor neuron for a neuromorphic visual system JK Han, DM Geum, MW Lee, JM Yu, SK Kim, S Kim, YK Choi Nano Letters 20 (12), 8781-8788, 2020 | 48 | 2020 |
Fabrication of high-quality GaAs-based photodetector arrays on Si SH Kim, DM Geum, MS Park, H Kim, JD Song, WJ Choi Applied Physics Letters 110 (15), 2017 | 46 | 2017 |
Effect of copper surface pre-treatment on the properties of CVD grown graphene MS Kim, JM Woo, DM Geum, JR Rani, JH Jang Aip Advances 4 (12), 2014 | 43 | 2014 |
Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ... IEEE Journal of the Electron Devices Society 6, 579-587, 2018 | 36 | 2018 |
Ultra-lightweight, flexible InGaP/GaAs tandem solar cells with a dual-function encapsulation layer TS Kim, HJ Kim, DM Geum, JH Han, IS Kim, N Hong, GH Ryu, JH Kang, ... ACS Applied Materials & Interfaces 13 (11), 13248-13253, 2021 | 32 | 2021 |
Understanding the sidewall passivation effects in AlGaInP/GaInP micro-LED J Park, W Baek, DM Geum, S Kim Nanoscale research letters 17 (1), 29, 2022 | 30 | 2022 |
Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems DM Geum, SH Kim, SK Kim, SS Kang, JH Kyhm, J Song, WJ Choi, E Yoon Scientific Reports 9 (1), 18661, 2019 | 27 | 2019 |
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding SH Kim, DM Geum, MS Park, CZ Kim, WJ Choi Solar Energy Materials and Solar Cells 141, 372-376, 2015 | 27 | 2015 |
Arrayed MoS2–In0.53Ga0.47As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light DM Geum, S Kim, JH Khym, J Lim, SK Kim, SY Ahn, TS Kim, K Kang, ... Small 17 (17), 2007357, 2021 | 25 | 2021 |
Heterogeneous and monolithic 3D integration of III–V-based radio frequency devices on Si CMOS circuits J Jeong, SK Kim, J Kim, DM Geum, D Kim, E Jo, H Jeong, J Park, JH Jang, ... ACS nano 16 (6), 9031-9040, 2022 | 22 | 2022 |
Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ... IEEE Journal of the Electron Devices Society 7, 869-877, 2019 | 22 | 2019 |
Fabrication and characterization of Pt/Al2O3/Y2O3/In0. 53Ga0. 47As MOSFETs with low interface trap density SK Kim, DM Geum, JP Shim, CZ Kim, H Kim, JD Song, WJ Choi, SJ Choi, ... Applied Physics Letters 110 (4), 2017 | 22 | 2017 |
In0.53Ga0.47As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Utilizing Y2O3Buried Oxide SH Kim, DM Geum, MS Park, WJ Choi IEEE Electron Device Letters 36 (5), 451-453, 2015 | 22 | 2015 |
3D stackable synaptic transistor for 3D integrated artificial neural networks SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ... ACS applied materials & interfaces 12 (6), 7372-7380, 2020 | 21 | 2020 |
Stackable InGaAs-on-insulator HEMTs for monolithic 3-D integration J Jeong, SK Kim, J Kim, DM Geum, J Park, JH Jang, S Kim IEEE Transactions on Electron Devices 68 (5), 2205-2211, 2021 | 19 | 2021 |
Monolithic 3D integration of InGaAs photodetectors on Si MOSFETs using sequential fabrication process DM Geum, SK Kim, S Lee, D Lim, HJ Kim, CH Choi, SH Kim IEEE Electron Device Letters 41 (3), 433-436, 2020 | 18 | 2020 |
10-nm fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch W Lu, IP Roh, DM Geum, SH Kim, JD Song, L Kong, JA del Alamo 2017 IEEE international electron devices meeting (IEDM), 17.7. 1-17.7. 4, 2017 | 18 | 2017 |