| Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini IEEE Transactions on electron devices 61 (8), 2912-2919, 2014 | 283 | 2014 |
| Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini IEEE Transactions on Electron Devices 61 (8), 2920-2927, 2014 | 147 | 2014 |
| Understanding switching variability and random telegraph noise in resistive RAM S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini 2013 IEEE International Electron Devices Meeting, 31.5. 1-31.5. 4, 2013 | 88 | 2013 |
| Voltage-dependent random telegraph noise (RTN) in HfOxresistive RAM S Balatti, S Ambrogio, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini 2014 IEEE International Reliability Physics Symposium, MY. 4.1-MY. 4.6, 2014 | 34 | 2014 |
| Voltage-dependent random telegraph noise (RTN) in HfO S Balatti, S Ambrogio, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini Proc. IEEE Int. Rel. Phys. Symp, 0 | 9 | |
| Statistical modeling of program and read variability in resistive switching devices S Ambrogio, S Balatti, A Cubeta, D Ielmini 2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2029-2032, 2014 | 5 | 2014 |
| Caratterizzazione elettrica della variabilità di programmazione e del rumore RTN in memorie a switching resistivo A CUBETA Politecnico di Milano, 2013 | | 2013 |
Stefano AmbrogioMeta, Reality Labs在 meta.com 的电子邮件经过验证
Stefano AmbrogioMeta, Reality Labs在 meta.com 的电子邮件经过验证
