| Experimental and theoretical demonstration of temperature limitation for 4H-SiC MOSFET during unclamped inductive switching J An, S Hu IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 206-214, 2019 | 52 | 2019 |
| Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage M Namai, J An, H Yano, N Iwamuro Japanese journal of applied physics 57 (7), 074102, 2018 | 45 | 2018 |
| Experimental and numerical demonstration and optimized methods for SiC trench MOSFET short-circuit capability M Namai, J An, H Yano, N Iwamuro 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 43 | 2017 |
| Heterojunction diode shielded SiC split-gate trench MOSFET with optimized reverse recovery characteristic and low switching loss J An, S Hu IEEE Access 7, 28592-28596, 2019 | 34 | 2019 |
| Investigation of robustness capability of− 730 V P-channel vertical SiC power MOSFET for complementary inverter applications J An, M Namai, H Yano, N Iwamuro IEEE Transactions on Electron Devices 64 (10), 4219-4225, 2017 | 34 | 2017 |
| Methodology for enhanced short-circuit capability of SiC MOSFETs J An, M Namai, H Yano, N Iwamuro, Y Kobayashi, S Harada 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 24 | 2018 |
| Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation J An, M Namai, N Iwamuro Japanese journal of applied physics 55 (12), 124102, 2016 | 20 | 2016 |
| Investigation of Maximum Junction Temperature for 4H‐SiC MOSFET During Unclamped Inductive Switching Test J An, M Namai, D Okamoto, H Yano, H Tadano, N Iwamuro Electronics and Communications in Japan 101 (1), 24-31, 2018 | 16 | 2018 |
| SiC trench MOSFET with heterojunction diode for low switching loss and high short‐circuit capability J An, S Hu IET Power Electronics 12 (8), 1981-1985, 2019 | 13 | 2019 |
| Experimental demonstration of− 730V vertical SiC p-MOSFET with high short circuit withstand capability for complementary inverter applications J An, M Namai, M Tanabe, D Okamoto, H Yano, N Iwamuro 2016 IEEE International Electron Devices Meeting (IEDM), 10.7. 1-10.7. 4, 2016 | 6 | 2016 |
| Study on robustness issues and related mechanisms for silicon carbide power mosfets J An | 1 | 2018 |
| Unclamped Inductive Switching 試験による 4H-SiC MOSFET の最大接合温度の評価; Unclamped Inductive Switching 試験による 4H-SiC MOSFET の最大接合温度の評価; Investigation of Maximum … J An, M Namai, D Okamoto, H Yano, H Tadano, N Iwamuro IEEJ Transactions on Electronics, Information and Systems 137 (2), 216-221, 2017 | | 2017 |
| SiC-P6 M Namai, J An, H Yano, N Iwamuro | | |
