| Anisotropic thermal conductivity in single crystal β-gallium oxide Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ... Applied Physics Letters 106 (11), 2015 | 495 | 2015 |
| High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTs A Hickman, R Chaudhuri, SJ Bader, K Nomoto, K Lee, HG Xing, D Jena IEEE Electron Device Letters 40 (8), 1293-1296, 2019 | 112 | 2019 |
| Prospects for wide bandgap and ultrawide bandgap CMOS devices SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ... IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020 | 101 | 2020 |
| GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ... IEEE Electron Device Letters 41 (5), 689-692, 2020 | 93 | 2020 |
| Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ... IEEE Electron Device Letters 39 (12), 1848-1851, 2018 | 83 | 2018 |
| Next generation electronics on the ultrawide-bandgap aluminum nitride platform AL Hickman, R Chaudhuri, SJ Bader, K Nomoto, L Li, JCM Hwang, ... Semiconductor Science and Technology 36 (4), 044001, 2021 | 69 | 2021 |
| First RF power operation of AlN/GaN/AlN HEMTs with> 3 A/mm and 3 W/mm at 10 GHz A Hickman, R Chaudhuri, L Li, K Nomoto, SJ Bader, JCM Hwang, ... IEEE Journal of the Electron Devices Society 9, 121-124, 2020 | 54 | 2020 |
| GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020 | 34 | 2020 |
| GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current SJ Bader, R Chaudhuri, A Hickman, K Nomoto, S Bharadwaj, HW Then, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2019 | 30 | 2019 |
| Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures J Singhal, R Chaudhuri, A Hickman, V Protasenko, HG Xing, D Jena APL Materials 10 (11), 2022 | 23 | 2022 |
| N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates E Kim, Z Zhang, J Encomendero, J Singhal, K Nomoto, A Hickman, ... Applied Physics Letters 122 (9), 2023 | 16 | 2023 |
| In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors R Chaudhuri, A Hickman, J Singhal, J Casamento, HG Xing, D Jena physica status solidi (a) 219 (4), 2100452, 2022 | 13 | 2022 |
| FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2022 International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2022 | 10 | 2022 |
| Bottom tunnel junction blue light-emitting field-effect transistors S Bharadwaj, K Lee, K Nomoto, A Hickman, L van Deurzen, V Protasenko, ... Applied Physics Letters 117 (3), 2020 | 10 | 2020 |
| Large signal response of AlN/GaN/AlN HEMTs at 30 GHz A Hickman, R Chaudhuri, N Moser, M Elliott, K Nomoto, L Li, JCM Hwang, ... 2021 Device Research Conference (DRC), 1-2, 2021 | 8 | 2021 |
| AlN/AlGaN/AlN quantum well channel HEMTs J Singhal, E Kim, A Hickman, R Chaudhuri, Y Cho, HG Xing, D Jena Applied Physics Letters 122 (22), 2023 | 5 | 2023 |
| AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2023 | 3 | 2023 |
| Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures X Wang, G Fabi, R Chaudhuri, A Hickman, MJ Asadi, K Nomoto, HG Xing, ... Applied Physics Letters 120 (1), 2022 | 3 | 2022 |
| RF operation of AlN/Al0. 25Ga0. 75N/AlN HEMTs with f T/f max of 67/166 GHz E Kim, J Singhal, A Hickman, L Li, R Chaudhuri, Y Cho, JCM Hwang, ... Applied Physics Express 16 (11), 111003, 2023 | 1 | 2023 |
| 2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC A Hickman, R Chaudhuri, L Li, K Nomoto, N Moser, M Elliott, M Guidry, ... physica status solidi (a) 220 (16), 2200774, 2023 | 1 | 2023 |
Debdeep JenaCornell University在 cornell.edu 的电子邮件经过验证
