| Modeling of negative capacitance in ferroelectric thin films HW Park, J Roh, YB Lee, CS Hwang Advanced Materials 31 (32), 1805266, 2019 | 131 | 2019 |
| Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices MH Park, DH Lee, K Yang, JY Park, GT Yu, HW Park, M Materano, ... Journal of Materials Chemistry C 8 (31), 10526-10550, 2020 | 126 | 2020 |
| Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film Y Cheng, Z Gao, KH Ye, HW Park, Y Zheng, Y Zheng, J Gao, MH Park, ... Nature communications 13 (1), 645, 2022 | 121 | 2022 |
| Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors K Do Kim, YH Lee, T Gwon, YJ Kim, HJ Kim, T Moon, SD Hyun, HW Park, ... Nano Energy 39, 390-399, 2017 | 111 | 2017 |
| Preparation and characterization of ferroelectric Hf0. 5Zr0. 5O2 thin films grown by reactive sputtering YH Lee, HJ Kim, T Moon, K Do Kim, SD Hyun, HW Park, YB Lee, MH Park, ... Nanotechnology 28 (30), 305703, 2017 | 108 | 2017 |
| Review of semiconductor flash memory devices for material and process issues SS Kim, SK Yong, W Kim, S Kang, HW Park, KJ Yoon, DS Sheen, S Lee, ... Advanced Materials 35 (43), 2200659, 2023 | 97 | 2023 |
| Voltage drop in a ferroelectric single layer capacitor by retarded domain nucleation YJ Kim, HW Park, SD Hyun, HJ Kim, KD Kim, YH Lee, T Moon, YB Lee, ... Nano letters 17 (12), 7796-7802, 2017 | 76 | 2017 |
| Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films YH Lee, SD Hyun, HJ Kim, JS Kim, C Yoo, T Moon, KD Kim, HW Park, ... Advanced Electronic Materials 5 (2), 1800436, 2019 | 72 | 2019 |
| Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films SD Hyun, HW Park, YJ Kim, MH Park, YH Lee, HJ Kim, YJ Kwon, T Moon, ... ACS applied materials & interfaces 10 (41), 35374-35384, 2018 | 68 | 2018 |
| Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al2O3/Hf0.3Zr0.7O2 Bilayer Thin Film KD Kim, YJ Kim, MH Park, HW Park, YJ Kwon, YB Lee, HJ Kim, T Moon, ... Advanced Functional Materials 29 (17), 1808228, 2019 | 65 | 2019 |
| A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis … BS Kim, SD Hyun, T Moon, K Do Kim, YH Lee, HW Park, YB Lee, J Roh, ... Nanoscale research letters 15, 1-11, 2020 | 52 | 2020 |
| Review of ferroelectric field‐effect transistors for three‐dimensional storage applications HW Park, JG Lee, CS Hwang Nano Select 2 (6), 1187-1207, 2021 | 48 | 2021 |
| Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer BY Kim, HW Park, SD Hyun, YB Lee, SH Lee, M Oh, SK Ryoo, IS Lee, ... Advanced Electronic Materials 8 (6), 2100042, 2022 | 39 | 2022 |
| Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer HW Park, SD Hyun, IS Lee, SH Lee, YB Lee, M Oh, BY Kim, SG Ryoo, ... Nanoscale 13 (4), 2556-2572, 2021 | 33 | 2021 |
| Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory SD Hyun, HW Park, MH Park, YH Lee, YB Lee, BY Kim, HH Kim, BS Kim, ... Advanced Electronic Materials 6 (11), 2000631, 2020 | 27 | 2020 |
| Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm SK Ryoo, KD Kim, HW Park, YB Lee, SH Lee, IS Lee, S Byun, D Shim, ... Advanced Electronic Materials 8 (11), 2200726, 2022 | 26 | 2022 |
| Study of ferroelectric characteristics of Hf0. 5Zr0. 5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes BY Kim, BS Kim, SD Hyun, HH Kim, YB Lee, HW Park, MH Park, ... Applied Physics Letters 117 (2), 2020 | 25 | 2020 |
| Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film YB Lee, BY Kim, HW Park, SH Lee, M Oh, SK Ryoo, IS Lee, S Byun, ... Advanced Electronic Materials 8 (11), 2200310, 2022 | 24 | 2022 |
| Evolution of the ferroelectric properties of AlScN film by electrical cycling with an inhomogeneous field distribution KD Kim, YB Lee, SH Lee, IS Lee, SK Ryoo, S Byun, JH Lee, H Kim, ... Advanced Electronic Materials 9 (5), 2201142, 2023 | 21 | 2023 |
| Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 14 | 2023 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National University在 snu.ac.kr 的电子邮件经过验证
