| An accurate charge-control-based approach for noise performance assessment of a symmetric tied-gate InAlAs/InGaAs DG-HEMT M Bhattacharya, J Jogi, RS Gupta, M Gupta IEEE transactions on electron devices 59 (6), 1644-1652, 2012 | 22 | 2012 |
| Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimeter-wave applications M Bhattacharya, J Jogi, RS Gupta, M Gupta Solid-state electronics 63 (1), 149-153, 2011 | 15 | 2011 |
| Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs N Chugh, M Bhattacharya, M Kumar, SS Deswal, RS Gupta Journal of Computational Electronics 17, 1229-1240, 2018 | 13 | 2018 |
| Impact of doping concentration and donor-layer thickness on the dc characterization of symmetric double-gate and single-gate InAlAs/InGaAs/InP HEMT for nanometer gate dimension … M Bhattacharya, J Jogi, RS Gupta, M Gupta TENCON 2010-2010 IEEE Region 10 Conference, 134-139, 2010 | 13 | 2010 |
| Impact of temperature and indium composition in the channel on the microwave performance of single-gate and double-gate InAlAs/InGaAs HEMT M Bhattacharya, J Jogi, RS Gupta, M Gupta IEEE transactions on nanotechnology 12 (6), 965-970, 2013 | 11 | 2013 |
| Applicability of field plate in double channel GaN HEMT for radio-frequency and power-electronic applications N Chugh, M Kumar, S Haldar, M Bhattacharya, RS Gupta Silicon, 1-10, 2021 | 10 | 2021 |
| Temperature-Dependent Analytical Model for Microwave and Noise Performance Characterization ofDG-HEMT M Bhattacharya, J Jogi, RS Gupta, M Gupta IEEE Transactions on device and materials reliability 13 (1), 293-300, 2013 | 10 | 2013 |
| Sheet carrier concentration and threshold voltage modeling of asymmetrically doped AlGaN/GaN/AlGaN double heterostructure HEMT N Chugh, M Bhattacharya, M Kumar, RS Gupta 2017 4th IEEE Uttar Pradesh Section International Conference on Electrical …, 2017 | 9 | 2017 |
| Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps N Chugh, M Kumar, M Bhattacharya, RS Gupta Microsystem Technologies, 1-10, 2019 | 8 | 2019 |
| Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications N Chugh, M Kumar, M Bhattacharya, RS Gupta Microsystem Technologies 27, 4065-4072, 2021 | 6 | 2021 |
| Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications N Chugh, M Kumar, M Bhattacharya, RS Gupta Semiconductors 53, 1784-1791, 2019 | 6 | 2019 |
| Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT M Bhattacharya, J Jogi, RS Gupta, M Gupta Superlattices and Microstructures 109, 13-22, 2017 | 6 | 2017 |
| Impact of temperature and Al composition on the threshold voltage and sheet carrier concentration of Al m Ga 1-m N/GaN/Al m Ga 1-m N double heterostructure HEMT N Chugh, M Bhattacharya, M Kumar, RS Gupta Publication in Springer proceedings in XIXth IWPSD, 2017 | 4 | 2017 |
| Modeling of InAlAs/InGaAs/InAlAs DG-HEMT mixer for microwave application P Parveen, N Verma, M Bhattacharya, J Jogi IOSR Journal of Electronics and Communication Engineering (IOSR-JECE) 10, 21-27, 2015 | 4 | 2015 |
| Impact of Donor Layer Thickness, Doping Concentration and Gate-Width on Gate-Capacitance of AlGaN/GaN Single and Double Heterostructure HEMT for Microwave Frequency Applications N Chugh, M Bhattacharya, M Kumar, RS Gupta 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 207-212, 2018 | 3 | 2018 |
| RF performance comparison of dual material gate (DMG) and conventional AlGaN/GaN high electron mobility transistor N Chugh, M Kumar, M Bhattacharya, RS Gupta 2018 4th International Conference on Devices, Circuits and Systems (ICDCS …, 2018 | 3 | 2018 |
| Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT M Bhattacharya, J Jogi, RS Gupta, M Gupta JSTS: Journal of Semiconductor Technology and Science 13 (4), 331-341, 2013 | 3 | 2013 |
| Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach N Chugh, S Haldar, M Bhattacharya, RS Gupta Microelectronics Journal 138, 105857, 2023 | 2 | 2023 |
| Modeling simulation and characterization of noise in inalas ingaas tied geometry double gate high electron mobility transistor for millimeter wave applications M Bhattacharya New Delhi, 2011 | 2 | 2011 |
| Microwave performance assessment of AlGaN/GaN/AlGaN DH-HEMT in terms of scattering parameters and various power gains N Chugh, M Kumar, M Bhattacharya, RS Gupta Microsystem Technologies 29 (6), 847-856, 2023 | 1 | 2023 |
Jyotika JogiProfessor, Department of Electronic Science, Atma Ram Sanatan Dharma College,University of Delhi在 arsd.du.ac.in 的电子邮件经过验证
