Effect of strains on electrical and optical properties of thin La 0.67 Ca0. 33MnO3 films B Vengalis, A Maneikis, F Anisimovas, R Butkut, L Dapkus, A Kindurys
Journal of magnetism and magnetic materials 211 (1-3), 35-40, 2000
77 2000 Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2 E Kaminska, A Piotrowska, J Kossut, A Barcz, R Butkute, W Dobrowolski, ...
Solid state communications 135 (1-2), 11-15, 2005
68 2005 Magnetoresistant La1− xSrxMnO3 films by pulsed injection metal organic chemical vapor deposition: effect of deposition conditions, substrate material and film thickness A Abrutis, V Plausinaitiene, V Kubilius, A Teiserskis, Z Saltyte, R Butkute, ...
Thin Solid Films 413 (1-2), 32-40, 2002
66 2002 Multi‐quantum well Ga (AsBi)/GaAs laser diodes with more than 6% of bismuth R Butkutė, A Geižutis, V Pačebutas, B Čechavičius, V Bukauskas, ...
Electronics letters 50 (16), 1155-1157, 2014
57 2014 Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, ...
Semiconductor Science and Technology 30 (9), 094008, 2015
46 2015 Structure and optical properties of InGaAsBi with up to 7% bismuth J Devenson, V Pačebutas, R Butkutė, A Baranov, A Krotkus
Applied Physics Express 5 (1), 015503, 2012
44 2012 p‐type conducting ZnO: fabrication and characterisation E Kaminska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ...
physica status solidi (c) 2 (3), 1119-1124, 2005
36 2005 Bismuth quantum dots in annealed GaAsBi/AlAs quantum wells R Butkutė, G Niaura, E Pozingytė, B Čechavičius, A Selskis, M Skapas, ...
Nanoscale research letters 12, 1-7, 2017
30 2017 Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers S Pūkienė, M Karaliūnas, A Jasinskas, E Dudutienė, B Čechavičius, ...
Nanotechnology 30 (45), 455001, 2019
24 2019 Terahertz pulse generation from (111)-cut InSb and InAs crystals when illuminated by 1.55-μm femtosecond laser pulses I Nevinskas, K Vizbaras, A Trinkūnas, R Butkutė, A Krotkus
Optics Letters 42 (13), 2615-2618, 2017
23 2017 Preparation and characterization of hexagonal MnTe and ZnO layers E Przeździecka, E Kamińska, E Dynowska, R Butkutė, W Dobrowolski, ...
physica status solidi (c) 2 (3), 1218-1223, 2005
23 2005 Spin-polarized quasiparticle injection effect in MOCVD-grown YBa2Cu3O7/SrTiO3/La1− xSrxMnO3 heterostructures V Plausinaitiene, A Abrutis, B Vengalis, R Butkute, JP Senateur, Z Saltyte, ...
Physica C: Superconductivity 351 (1), 13-16, 2001
21 2001 Photoluminescence at up to 2.4 μm wavelengths from GaInAsBi/AlInAs quantum wells R Butkutė, V Pačebutas, B Čechavičius, R Nedzinskas, A Selskis, ...
Journal of crystal growth 391, 116-120, 2014
20 2014 Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-x x T Paulauskas, V Pačebutas, R Butkutė, B Čechavičius, A Naujokaitis, ...
Nanoscale Research Letters 15, 1-12, 2020
19 2020 Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures R Butkutė, K Stašys, V Pačebutas, B Čechavičius, R Kondrotas, A Geižutis, ...
Optical and Quantum Electronics 47 (4), 873-882, 2015
18 2015 Photoluminescence investigation of GaAs1− xBix/GaAs heterostructures V Pačebutas, R Butkutė, B Čechavičius, J Kavaliauskas, A Krotkus
Thin Solid Films 520 (20), 6415-6418, 2012
18 2012 Thermal annealing effect on the properties of GaBiAs R Butkutė, V Pačebutas, B Čechavičius, R Adomavičius, A Koroliov, ...
physica status solidi c 9 (7), 1614-1616, 2012
18 2012 p-type conducting ZnO: fabrication and characterization E Kamińska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ...
Phys Stat Sol 2 (3), 1119-1124, 2005
17 2005 InGaAs diodes for terahertz sensing—Effect of molecular beam epitaxy growth conditions V Palenskis, L Minkevičius, J Matukas, D Jokubauskis, S Pralgauskaitė, ...
Sensors 18 (11), 3760, 2018
15 2018 Growth and Investigation of Heterostructures Based on Multiferroic B Vengalis, J Devenson, A Oginskis, R Butkutė, A Maneikis, ...
Acta Physica Polonica A 113 (3), 1095-1098, 2008
15 2008 
Arunas KrotkusCenter for Physical Sciences and Technology, Vilnius, Lithuania在 pfil.lt 的电子邮件经过验证
