| Analytical approach to study sensing properties of graphene based gas sensor A Hosseingholipourasl, S Hafizah Syed Ariffin, YD Al-Otaibi, E Akbari, ... Sensors 20 (5), 1506, 2020 | 33 | 2020 |
| Graphene nanoribbon field effect transistor logic gates performance projection Z Johari, FKA Hamid, MLP Tan, MT Ahmadi, FK Harun, R Ismail Journal of Computational and Theoretical Nanoscience 10 (5), 1164-1170, 2013 | 26 | 2013 |
| Three Dimensional of Zinc Oxide Nanostructures as an Active Site Platform for Biosensor: Recent Trend in Healthcare Diagnosis SMS MUHAMMAD LUQMAN MOHD NAPI, Ahmad Fakhrurrazi Ahmad Noorden, Michael ... Journal of the Electrochemical Society, 2020 | 20 | 2020 |
| Effects of high-k dielectric materials on electrical performance of double gate and gate-all-around MOSFET NF Kosmani, FA Hamid, MA Razali International Journal of Integrated Engineering 12 (2), 81-88, 2020 | 19 | 2020 |
| Resistive Strain Sensors Based on Carbon Black and Multi-Wall Carbon Nanotube Composites MSMA Fatimah Khairiah Abd Hamid, Mohammed Nazibul Hasan , Gantan Etika Murty ... Sensors and Actuators A: Physical 366, 0924-0427, 2024 | 9* | 2024 |
| A comparison of performance between double-gate and gate-all-around nanowire MOSFET NF Kosmani, FA Hamid, MA Razali Indonesian Journal of Electrical Engineering and Computer Science 13 (2 …, 2019 | 9 | 2019 |
| Modeling of Inversion and Centroid Charges of Long Channel Strained-Silicon Surrounding Gate MOSFETs incorporating Quantum Effects FA Hamid, Z Johari, NE Alias, HL Wei, WS Leong, R Ismail Semiconductor Science and Technology, 2020 | 8 | 2020 |
| Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects A Hamzah, FA Hamid, R Ismail Semiconductor Science and Technology 31 (12), 125020, 2016 | 8 | 2016 |
| The Effect of Interconnect on the Circuit Performance of 22 nm Graphene Nanoribbon Field Effect Transistor and MOSFET Z Johari, FKA Hamid, MT Ahmadi, FK Harun, R Ismail Journal of Computational and Theoretical Nanoscience 10 (6), 1305-1309, 2013 | 7 | 2013 |
| Heat-assisted µ-Electrical Discharge Machining of Silicon MSMA Noor Dzulaikha Daud, Farah Afiqa Mohd Ghazali, Fatimah Khairiah Abd ... The International Journal of Advanced Manufacturing Technology, 2021 | 6 | 2021 |
| Finite element analysis of silicon nanowire array based SAW gas sensor MIA Asri, MN Hasan, MRA Fua’ad, FK Abd Hamid, YM Yunos, MSM Ali ELEKTRIKA-Journal of Electrical Engineering 20 (2-2), 36-40, 2021 | 5 | 2021 |
| Geometry effect on graphene nanoscrolls band gap MAN Hamzah, Z Johari, FKA Hamid, MT Ahmadi, R Ismail Journal of Computational and Theoretical Nanoscience 10 (3), 581-586, 2013 | 5 | 2013 |
| Low-Dimensional Silicon Nanowire (SiNW) Conductance Model N Bahador, MT Ahmadi, FKA Hamid, Z Johari, A Hamzah, S Isaak, ... Quantum Matter 2 (5), 417-420, 2013 | 4 | 2013 |
| The effect of effective channel length on a silicon nanowire fin field effect transistor FKA Hamid, S Anwar, NA Amin, Z Johari, H Sadeghi, MA Nurudin, ... Journal of Computational and Theoretical Nanoscience 10 (4), 964-967, 2013 | 4 | 2013 |
| Performance Analysis of Silicon and III-V Channel Material for Junctionless-Gate-All-Around Field Effect Transistor MFM Rasol, FKA Hamid, Z Johari, R Arsat, MFM Yusoff 2020 IEEE Student Conference on Research and Development (SCOReD), 1-5, 2020 | 2 | 2020 |
| Scattering effects in silicon nanowire fin field effect transistor FKA Hamid, JF Webb, Z Johari, WS Leong, MA Riyadi, MT Ahmadi, ... 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012 | 2 | 2012 |
| Electrical Characterization of N-MOS and P-MOS Junctionless Gate-All-Around (GAA) Mosfet for an Inverter Application HK Pow, N Mathan, MSM Ali, MLM Napi, A Hosseingholipouras, ... ELEKTRIKA-Journal of Electrical Engineering 20 (2-2), 93-97, 2021 | 1 | 2021 |
| Stacking SiO2/ High-K Dielectric Material in 30nmJunction-less Nanowire Transistor Optimized UsingTaguchi Method for Lower Leakage Current MFM Rasol, FKA Hamid, Z Johari, NE Alias, R Ismail IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 2019 | 1 | 2019 |
| Compact modeling of strained GAA SiNW FKA Hamid, NE Alias, R Ismail, MA Razali Indonesian Journal of Electrical Engineering and Computer Science 14 (1 …, 2019 | 1 | 2019 |
| Simulation study of 25 nm PMOS FinFET fabrication with silicon co-implant MA Razali, FA Hamid 2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 151-154, 2017 | 1 | 2017 |
RAZALI ISMAILFaculy of Electrical Engineering, Universiti Teknologi Malaysia在 fke.utm.my 的电子邮件经过验证
