Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT A Malik, C Sharma, R Laishram, RK Bag, DS Rawal, S Vinayak, ... Solid-State Electronics 142, 8-13, 2018 | 36 | 2018 |
Cumulative dose γ-irradiation effects on material properties of AlGaN/GaN hetero-structures and electrical properties of HEMT devices C Sharma, AK Visvkarma, R Laishram, A Malik, K Narang, S Vinayak, ... Semiconductor Science and Technology 34 (6), 065024, 2019 | 32 | 2019 |
Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors AK Visvkarma, C Sharma, R Laishram, S Kapoor, DS Rawal, S Vinayak, ... AIP Advances 9 (12), 2019 | 26 | 2019 |
Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures C Sharma, AK Visvkarma, R Laishram, A Kumar, DS Rawal, S Vinayak, ... Microelectronics Reliability 105, 113565, 2020 | 24 | 2020 |
Understanding -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model C Sharma, N Modolo, TL Wu, M Meneghini, G Meneghesso, E Zanoni, ... IEEE Transactions on Electron Devices 67 (3), 1126-1131, 2020 | 15 | 2020 |
Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices C Sharma, R Laishram, A Amit, DS Rawal, S Vinayak, R Singh AIP Advances 7 (8), 2017 | 13 | 2017 |
Effects of γ-Ray irradiation on AlGaN/GaN heterostructures and high electron mobility transistor devices C Sharma, R Singh, DS Chao, TL Wu Journal of Electronic Materials 49 (11), 6789-6797, 2020 | 12 | 2020 |
Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results E Zanoni, F Rampazzo, C De Santi, Z Gao, C Sharma, N Modolo, ... physica status solidi (a) 219 (24), 2100722, 2022 | 11 | 2022 |
Detection of Pathogenic Escherichia coli (Ec oli) Strain Using Robust Silver and Gold Nanoparticles J Boken, S Dalela, CK Sharma, D Kumar J Chem Eng Process Technol 4 (8), 1-6, 2013 | 11 | 2013 |
Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation C Sharma, N Modolo, HH Chen, YY Tseng, SW Tang, M Meneghini, ... Microelectronics Reliability 100, 113349, 2019 | 10 | 2019 |
Cumulative dose 60Co gamma irradiation effects on AlGaN/GaN Schottky diodes and its area dependence C Sharma, R Laishram, DS Rawal, S Vinayak, R Singh AIP Conference Proceedings 1942 (1), 2018 | 10 | 2018 |
A heterologous chloroplast rDNA revealed highly conserved RFLP patterns in the family Asteraceae M Singh, C Sharma, PS Ahuja Plant Molecular Biology Reporter 17 (1), 73-73, 1999 | 9 | 1999 |
Role of the AlGaN cap layer on the trapping behaviour of N-polar GaN MISHEMTs F Chiocchetta, C Calascione, C De Santi, C Sharma, F Rampazzo, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-2, 2021 | 7 | 2021 |
Review on the degradation of GaN-based lateral power transistors C De Santi, M Buffolo, I Rossetto, T Bordignon, E Brusaterra, A Caria, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 1, 100018, 2021 | 7 | 2021 |
Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation AK Visvkarma, C Sharma, C Saraswat, DS Rawal, S Vinayak, M Saxena Semiconductor Science and Technology 36 (6), 065012, 2021 | 5 | 2021 |
Characterization of a highly repetitive DNA sequence in Camellia sinensis (L.) O. Kuntze genome M Singh, B Dhiman, C Sharma Journal of Biotech Research 3, 78, 2011 | 5 | 2011 |
United States Patent RL Singh, C Sharma, B Lal Patent, 1998 | 5 | 1998 |
Role of carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers C De Santi, E Zanoni, M Meneghini, G Meneghesso, F Rampazzo, ... Gallium Nitride Materials and Devices XVII 12001, 92-97, 2022 | 4 | 2022 |
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation G Meneghesso, M Meneghini, C De Santi, M Buffolo, F Rampazzo, ... 2021 43rd Annual EOS/ESD Symposium (EOS/ESD) 43, 1-8, 2021 | 4 | 2021 |
Microstructural Characterization of GaN Grown on SiC S Saha, D Kumar, CK Sharma, VK Singh, S Channagiri, DV Sridhara Rao Microscopy and Microanalysis 25 (6), 1383-1393, 2019 | 4 | 2019 |