| Design of U-shape channel tunnel FETs with SiGe source regions W Wang, PF Wang, CM Zhang, X Lin, XY Liu, QQ Sun, P Zhou, DW Zhang IEEE Transactions on Electron Devices 61 (1), 193-197, 2013 | 177 | 2013 |
| Characterization of gigarad total ionizing dose and annealing effects on 28-nm bulk MOSFETs CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ... IEEE Transactions on Nuclear Science 64 (10), 2639-2647, 2017 | 64 | 2017 |
| Characterization and modeling of gigarad-TID-induced drain leakage current of 28-nm bulk MOSFETs CM Zhang, F Jazaeri, G Borghello, F Faccio, S Mattiazzo, A Baschirotto, ... IEEE Transactions on Nuclear Science 66 (1), 38-47, 2018 | 45 | 2018 |
| AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique XY Liu, SX Zhao, LQ Zhang, HF Huang, JS Shi, CM Zhang, HL Lu, ... Nanoscale Research Letters 10, 1-6, 2015 | 41 | 2015 |
| Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad S Mattiazzo, M Bagatin, D Bisello, S Gerardin, A Marchioro, ... Journal of Instrumentation 12 (02), C02003, 2017 | 34 | 2017 |
| Charge-based modeling of radiation damage in symmetric double-gate MOSFETs F Jazaeri, CM Zhang, A Pezzotta, C Enz IEEE Journal of the Electron Devices Society 6, 85-94, 2017 | 33 | 2017 |
| Impact of gigarad ionizing dose on 28-nm bulk MOSFETs for future HL-LHC A Pezzotta, CM Zhang, F Jazaeri, C Bruschini, G Borghello, F Faccio, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 146-149, 2016 | 24 | 2016 |
| Gigarad total ionizing dose and post-irradiation effects on 28-nm bulk MOSFETs CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, F Faccio, ... 2016 IEEE Nuclear Science Symposium and Medical Imaging Conference …, 2016 | 21 | 2016 |
| Total ionizing dose effects on analog performance of 28-nm bulk MOSFETs CM Zhang, F Jazaeri, A Pezzotta, C Bruschini, G Borghello, S Mattiazzo, ... 2017 47th European Solid-State Device Research Conference (ESSDERC), 30-33, 2017 | 19 | 2017 |
| Bias dependence of total ionizing dose effects on 28-nm bulk MOSFETs CM Zhang, F Jazaeri, G Borghello, S Mattiazzo, A Baschirotto, C Enz 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference …, 2018 | 10 | 2018 |
| Investigation of temperature dependence, device scalability, and modeling of semi-floating-gate transistor memory cells X Lin, XY Liu, CM Zhang, L Liu, JS Shi, S Zhang, WB Wang, WH Bu, J Wu, ... IEEE Transactions on Electron Devices 62 (4), 1177-1183, 2015 | 10 | 2015 |
| A generalized EKV charge-based MOSFET model including oxide and interface traps CM Zhang, F Jazaeri, G Borghello, S Mattiazzo, A Baschirotto, C Enz Solid-State Electronics, 107951, 2020 | 8 | 2020 |
| Mobility degradation of 28-nm bulk MOSFETs irradiated to ultrahigh total ionizing doses CM Zhang, F Jazaeri, G Borghello, S Mattiazzo, A Baschirotto, C Enz 2018 IEEE International Conference on Integrated Circuits, Technologies and …, 2018 | 5 | 2018 |
| Characterization and Optimization of a Single‐Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate XY Liu, J Wu, XY Liu, S Zhang, X Lin, CM Zhang, PF Wang, DW Zhang Journal of Sensors 2015 (1), 167145, 2015 | 4 | 2015 |
| Characterization and modeling of gigarad-TID-induced drain leakage current in a 28-nm bulk CMOS technology CM Zhang, F Jazaeri, G Borghello, F Faccio, S Mattiazzo, A Baschirotto, ... 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2018 | 3 | 2018 |
| Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma HX Zhang, CM Zhang, PF Wang 2015 China Semiconductor Technology International Conference, 1-3, 2015 | 3 | 2015 |
| Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments CM Zhang Lausanne, EPFL, 2021 | 2 | 2021 |
| Investigation of spin-on-dopant for fabricating high on-current tunneling field effect transistor WC Zhou, X Lin, XY Liu, XM Xu, CM Zhang, JS Shi, PF Wang, DW Zhang 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 1 | 2014 |
| PEALD Ru/RuOx films for ULSI applications and its transition control between metal and metal oxide CM Zhang, QQ Sun, PF Wang, DW Zhang 2013 10th IEEE International Conference on ASIC (ASICON), 1-4, 2013 | 1 | 2013 |
| Dental imaging with a quantum‐dot‐based direct conversion X‐ray image sensor CM Zhang, R Quaglia, A Shulga, V Goossens, AAH Husain, B Stadlinger, ... 2024 IEEE Nuclear Science Symposium and Medical Imaging Conference …, 2024 | | 2024 |
