| Dopingless tunnel field-effect transistor with oversized back gate: proposal and investigation MA Raushan, N Alam IEEE Transactions on Electron Devices 65 (10), 4701-4708, 2018 | 44 | 2018 |
| Performance enhancement of UV quantum well light emitting diode through structure optimization S Ahmad, MA Raushan, H Gupta, S Kattayat, S Kumar, S Dalela, PA Alvi, ... Optical and Quantum Electronics 51, 1-23, 2019 | 27 | 2019 |
| Modeling and simulation of GaN based QW LED for UV emission S Ahmad, MA Raushan, S Kumar, S Dalela, MJ Siddiqui, PA Alvi Optik 158, 1334-1341, 2018 | 26 | 2018 |
| Impact of asymmetric dual-k spacers on tunnel field effect transistors MA Raushan, N Alam, MW Akram, MJ Siddiqui Journal of Computational Electronics 17, 756-765, 2018 | 24 | 2018 |
| Performance enhancement of junctionless tunnel field effect transistor using dual-k spacers MA Raushan, N Alam, MJ Siddiqui Journal of Nanoelectronics and Optoelectronics 13 (6), 912-920, 2018 | 16 | 2018 |
| Reducing off-state leakage current in dopingless transistor employing dual metal drain S Zafar, MA Raushan, S Ahmad, MJ Siddiqui Semiconductor Science and Technology 35 (1), 015016, 2019 | 12 | 2019 |
| Electrostatically doped drain junctionless transistor for low-power applications MA Raushan, N Alam, MJ Siddiqui Journal of Computational Electronics 18, 864-871, 2019 | 11 | 2019 |
| Investigation of gate material engineering in junctionless transistor for digital and analog applications MDY Bashir, MA Raushan, S Ahmad, MJ Siddiqui Silicon, 1-12, 2021 | 8 | 2021 |
| Achievements and perspectives of GaN based light emitting diodes: A critical review S Ahmad, MA Raushan, MJ Siddiqui 2017 International Conference on Trends in Electronics and Informatics (ICEI …, 2017 | 8 | 2017 |
| Performance improvement of dopingless transistor for low power applications MA Raushan, MDY Bashir, N Alam, MJ Siddiqui Silicon, 1-12, 2022 | 4 | 2022 |
| Impact of Pocket in a Doping-Less Tunnel Field Effect Transistor MA Raushan, M Mustaqeem, S Ahmad, MJ Siddiqui Proceedings of 6th International Conference on Recent Trends in Computing …, 2021 | 3 | 2021 |
| Design approach to improve the performance of JAMFETs MA Raushan, N Alam, MJ Siddiqui IET Circuits, Devices & Systems 14 (3), 333-339, 2020 | 3 | 2020 |
| Pocket engineered electrostatically doped tunnel field effect transistor MA Raushan, N Alam, MJ Siddiqui TENCON 2019-2019 IEEE Region 10 Conference (TENCON), 1842-1845, 2019 | 2 | 2019 |
| Achievements and Limitations of UV-LEDs: A Critical Review S Ahmad, MA Raushan, MJ Siddiqui, I Ashraf no 3, 42016, 2018 | 2 | 2018 |
| Efficiency Enhancement of Blue Light Emitting Diode using lattice matched Quantum barrier and modified Quantum Well IA Khan, S Ahamd, PA Alvi, MA Raushan, A Ahmad, MJ Siddiqui 2022 IEEE Delhi Section Conference (DELCON), 1-7, 2022 | 1 | 2022 |
| Impact of P pocket in doping less tunnel field effect transistor NHN Haneef, R MARMA, B MYBMY, S MJSMJ Proceedings of 6th International Conference on Recent Trends in Computing …, 2020 | 1 | 2020 |
| A high-performance doping-less tunnel FET with pocketed architecture: proposal and analysis N Haneef, MA Raushan, MY Bashir, MJ Siddiqui Journal of Computational Electronics 22 (4), 954-963, 2023 | | 2023 |
| Physical Insight into electrostatically doped TFET considering Ambipolarity conduction N Haneef, MY Bashir, MA Raushan, MJ Siddiqui 2022 5th International Conference on Multimedia, Signal Processing and …, 2022 | | 2022 |
| Introduction of Metal Layer in Junctionless Accumulation Mode FET:-Proposal and Analysis MA Raushan, MDY Bashir, S Nishad, S Ahmad, MJ Siddiqui Silicon 14 (17), 11619-11632, 2022 | | 2022 |
| and Mohd Jawaid Siddiqui MA Raushan, N Alam Nanoelectronic Devices for Hardware and Software Security 1 (1.6), 1.7, 2021 | | 2021 |
Mohammad Jawaid SiddiquiProfessor amu aligarh在 amu.ac.in 的电子邮件经过验证
