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Martin Hempel
Martin Hempel
未知所在单位机构
在 izm.fraunhofer.de 的电子邮件经过验证
标题
引用次数
引用次数
年份
Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers
JW Tomm, M Ziegler, M Hempel, T Elsaesser
Laser & Photonics Reviews 5 (3), 422-441, 2011
1352011
Defect evolution during catastrophic optical damage of diode lasers
M Hempel, F La Mattina, JW Tomm, U Zeimer, R Broennimann, ...
Semiconductor Science and Technology 26 (7), 075020, 2011
552011
Catastrophic optical damage at front and rear facets of diode lasers
M Hempel, JW Tomm, M Ziegler, T Elsaesser, N Michel, M Krakowski
Applied Physics Letters 97 (23), 231101, 2010
492010
Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage
M Ziegler, M Hempel, HE Larsen, JW Tomm, PE Andersen, S Clausen, ...
Applied Physics Letters 97 (2), 021110, 2010
442010
Fast continuous tuning of terahertz quantum-cascade lasers by rear-facet illumination
M Hempel, B Röben, L Schrottke, HW Hübers, HT Grahn
Applied Physics Letters 108 (19), 191106, 2016
412016
Microscopic origins of catastrophic optical damage in diode lasers
M Hempel, JW Tomm, F La Mattina, I Ratschinski, M Schade, I Shorubalko, ...
IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1500508-1500508, 2012
372012
Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers
M Winterfeldt, J Rieprich, S Knigge, A Maaßdorf, M Hempel, R Kernke, ...
High-Power Diode Laser Technology and Applications XIV 9733, 97330O, 2016
312016
How does external feedback cause AlGaAs-based diode lasers to degrade?
M Hempel, M Chi, PM Petersen, U Zeimer, JW Tomm
Applied Physics Letters 102 (2), 023502, 2013
312013
Time‐resolved reconstruction of defect creation sequences in diode lasers
M Hempel, JW Tomm, V Hortelano, N Michel, J Jim, M Krakowski, ...
Laser & Photonics Reviews 6 (6), L15-L19, 2012
282012
High-power diode lasers under external optical feedback
B Leonhäuser, H Kissel, JW Tomm, M Hempel, A Unger, J Biesenbach
High-Power Diode Laser Technology and Applications XIII 9348, 93480M, 2015
262015
Kinetics of catastrophic optical damage in GaN-based diode lasers
M Hempel, JW Tomm, B Stojetz, H König, U Strauss, T Elsaesser
Semiconductor Science and Technology 30 (7), 072001, 2015
242015
Near-field dynamics of broad area diode laser at very high pump levels
M Hempel, JW Tomm, M Baeumler, H Konstanzer, J Mukherjee, ...
AIP Advances 1 (4), 042148, 2011
232011
Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers
M Hempel, M Ziegler, JW Tomm, T Elsaesser, N Michel, M Krakowski
Applied Physics Letters 96 (25), 251105, 2010
222010
Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy
B Röben, X Lü, M Hempel, K Biermann, L Schrottke, HT Grahn
Optics express 25 (14), 16282-16290, 2017
192017
High single-spatial-mode pulsed power from 980 nm emitting diode lasers
M Hempel, JW Tomm, T Elsaesser, M Bettiati
Applied Physics Letters 101 (19), 191105, 2012
162012
Short‐wavelength infrared defect emission as a probe of degradation processes in 980 nm single‐mode diode lasers
M Hempel, JW Tomm, F Yue, MA Bettiati, T Elsaesser
Laser & Photonics Reviews 8 (5), L59-L64, 2014
142014
Spectroscopic analysis of packaging concepts for high-power diode laser bars
M Hempel, M Ziegler, S Schwirzke-Schaaf, JW Tomm, D Jankowski, ...
Applied Physics A 107 (2), 371-377, 2012
142012
Continuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination
M Hempel, B Röben, M Niehle, L Schrottke, A Trampert, HT Grahn
AIP Advances 7 (5), 055201, 2017
132017
Analysis of GaN based high‐power diode lasers after singular degradation events
G Mura, M Vanzi, M Hempel, JW Tomm
physica status solidi (RRL)–Rapid Research Letters 11 (7), 1700132, 2017
122017
Long-Term Aging and Quick Stress Testing of 980-nm Single-Spatial Mode Lasers
M Hempel, JW Tomm, D Venables, V Rossin, E Zucker, T Elsaesser
Journal of Lightwave Technology 33 (21), 4450-4456, 2015
102015
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