| Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ... IEEE Transactions on Electron Devices 65 (1), 45-50, 2017 | 200 | 2017 |
| N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 38 (3), 359-362, 2017 | 112 | 2017 |
| W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (3), 349-352, 2020 | 98 | 2020 |
| N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance OS Koksaldi, J Haller, H Li, B Romanczyk, M Guidry, S Wienecke, S Keller, ... IEEE Electron Device Letters 39 (7), 1014-1017, 2018 | 89 | 2018 |
| High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (5), 681-684, 2020 | 68 | 2020 |
| 6.2 W/mm and record 33.8% pae at 94 GHz from n-polar GaN deep recess MIS-HEMTs with ALD Ru gates W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ... IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021 | 49 | 2021 |
| N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ... IEEE Electron Device Letters 37 (6), 713-716, 2016 | 49 | 2016 |
| N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ... IEEE Electron Device Letters 37 (1), 77-80, 2015 | 48 | 2015 |
| N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ... IEEE Electron Device Letters 41 (11), 1633-1636, 2020 | 42 | 2020 |
| W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2016 | 37 | 2016 |
| Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current D Pawlik, B Romanczyk, P Thomas, S Rommel, M Edirisooriya, ... 2012 International Electron Devices Meeting, 27.1. 1-27.1. 3, 2012 | 36 | 2012 |
| Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ... 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 32 | 2016 |
| First demonstration of Aluminum gallium nitride (AlGaN)-Gallium nitride (GaN) superlattice (SL) based p-channel field effect transistor A Krishna, A Raj, N Hatui, O Koksaldi, B Romanczyk, C Gupta, S Keller, ... arXiv preprint arXiv:1902.02022, 2019 | 29* | 2019 |
| High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ... 2016 Lester Eastman Conference (LEC), 42-45, 2016 | 29 | 2016 |
| High performance N-polar GaN HEMTs with OIP3/Pdc∼12dB at 10GHz A Arias, P Rowell, J Bergman, M Urteaga, K Shinohara, X Zheng, H Li, ... 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2017 | 27 | 2017 |
| High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces SH Chan, S Keller, M Tahhan, H Li, B Romanczyk, SP DenBaars, ... Semiconductor Science and Technology 31 (6), 065008, 2016 | 26 | 2016 |
| Demonstration of 30 GHz OIP3/PDC> 10 dB by mm-wave N-polar Deep Recess MISHEMTs M Guidry, B Romanczyk, H Li, E Ahmadi, S Wienecke, X Zheng, S Keller, ... 2019 14th European Microwave Integrated Circuits Conference (EuMIC), 64-67, 2019 | 25 | 2019 |
| Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High X Zheng, H Li, M Guidry, B Romanczyk, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 39 (3), 409-412, 2018 | 25 | 2018 |
| Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ... Electronics Letters 52 (21), 1813-1814, 2016 | 25 | 2016 |
| W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width M Guidry, S Wienecke, B Romanczyk, X Zheng, H Li, E Ahmadi, ... 2016 87th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2016 | 24 | 2016 |
Umesh MishraUCSB在 ece.ucsb.edu 的电子邮件经过验证
