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Barry O'Sullivan
Barry O'Sullivan
在 imec.be 的电子邮件经过验证
标题
引用次数
引用次数
年份
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
3062008
Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy
JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur
Journal of Non-Crystalline Solids 303 (1), 134-138, 2002
2292002
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
1772018
interface properties following rapid thermal processing
BJ O’sullivan, PK Hurley, C Leveugle, JH Das
Journal of Applied Physics 89 (7), 3811-3820, 2001
992001
Crystalline thin‐foil silicon solar cells: where crystalline quality meets thin‐film processing
F Dross, K Baert, T Bearda, J Deckers, V Depauw, O El Daif, I Gordon, ...
Progress in Photovoltaics: Research and Applications 20 (6), 770-784, 2012
972012
Estimation of fixed charge densities in hafnium-silicate gate dielectrics
VS Kaushik, BJ O'Sullivan, G Pourtois, N Van Hoornick, A Delabie, ...
IEEE Transactions on Electron Devices 53 (10), 2627-2633, 2006
892006
Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD
Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 428 (1-2), 263-268, 2003
772003
Interface of ultrathin HfO2 films deposited by UV-photo-CVD
Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'sullivan, PK Hurley, ...
Thin Solid Films 453, 203-207, 2004
722004
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
C Dubourdieu, H Roussel, C Jiménez, M Audier, JP Sénateur, S Lhostis, ...
Materials Science and Engineering: B 118 (1-3), 105-111, 2005
492005
Characterisation of HfO2 deposited by photo-induced chemical vapour deposition
Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 427 (1-2), 391-396, 2003
472003
Examination of the Si (111) SiO2, Si (110) SiO2, and Si (100) SiO2 interfacial properties following rapid thermal annealing
PK Hurley, BJ O’Sullivan, FN Cubaynes, PA Stolk, FP Widdershoven, ...
Journal of the Electrochemical Society 149 (3), G194, 2002
442002
Passivation of a metal contact with a tunneling layer
X Loozen, JB Larsen, F Dross, M Aleman, T Bearda, BJ O'sullivan, ...
Energy Procedia 21, 75-83, 2012
432012
Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET
Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019
352019
Analysis of centers at the interface following rapid thermal annealing
PK Hurley, A Stesmans, VV Afanas’ ev, BJ O’sullivan, E O’Callaghan
Journal of Applied Physics 93 (7), 3971-3973, 2003
352003
Interface States and P b Defects at the Si (100)/HfO2 Interface
PK Hurley, BJ O’Sullivan, VV Afanas’ev, A Stesmans
Electrochemical and solid-state letters 8 (2), G44, 2004
342004
Effective work function modulation by controlled dielectric monolayer deposition
L Pantisano, T Schram, B O’Sullivan, T Conard, S De Gendt, ...
Applied physics letters 89 (11), 2006
332006
Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal
S Kubicek, T Schram, V Paraschiv, R Vos, M Demand, C Adelmann, ...
2007 IEEE International Electron Devices Meeting, 49-52, 2007
312007
Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks
J Swerts, E Liu, S Couet, S Mertens, S Rao, W Kim, K Garello, L Souriau, ...
2017 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2017
302017
Defect profiling in FEFET Si: HfO2 layers
BJ O'sullivan, V Putcha, R Izmailov, V Afanas' ev, E Simoen, T Jung, ...
Applied Physics Letters 117 (20), 2020
282020
Electrical evaluation of defects at the Si (100)/HfO2 interface
BJ O’Sullivan, PK Hurley, E O’Connor, M Modreanu, H Roussel, ...
Journal of the Electrochemical Society 151 (8), G493, 2004
262004
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