| High‐Performance Solution‐Processed 2D P‐Type WSe2 Transistors and Circuits through Molecular Doping T Zou, HJ Kim, S Kim, A Liu, MY Choi, H Jung, H Zhu, I You, Y Reo, ... Advanced Materials 35 (7), 2208934, 2023 | 29 | 2023 |
| Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9 G Noh, H Song, H Choi, M Kim, JH Jeong, Y Lee, MY Choi, S Oh, M Jo, ... Advanced Materials 34 (41), 2204982, 2022 | 25 | 2022 |
| Wafer-scale programmed assembly of one-atom-thick crystals SJ Yang, JH Jung, E Lee, E Han, MY Choi, D Jung, S Choi, JH Park, D Oh, ... Nano letters 22 (4), 1518-1524, 2022 | 18 | 2022 |
| Engineering Grain Boundaries in Two‐Dimensional Electronic Materials SJ Yang, MY Choi, CJ Kim Advanced Materials 35 (4), 2203425, 2023 | 15 | 2023 |
| Thermodynamically driven tilt grain boundaries of monolayer crystals using catalytic liquid alloys MY Choi, CW Choi, DY Kim, MH Jo, YS Kim, SY Choi, CJ Kim Nano Letters 23 (10), 4516-4523, 2023 | 5 | 2023 |
| Substrate-Dependent Growth Mode Control of MoS2 Monolayers: Implications for Hydrogen Evolution and Field-Effect Transistors MY Choi, CW Choi, SJ Yang, H Lee, S Choi, JH Park, J Heo, SY Choi, ... ACS Applied Nano Materials 5 (3), 4336-4342, 2022 | 5 | 2022 |
