| Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress TC Chen, TC Chang, CT Tsai, TY Hsieh, SC Chen, CS Lin, MC Hung, ... Applied Physics Letters 97 (11), 2010 | 210 | 2010 |
| Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition TC Chen, TC Chang, TY Hsieh, CT Tsai, SC Chen, CS Lin, MC Hung, ... Applied Physics Letters 97 (19), 2010 | 127 | 2010 |
| Effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive-bias-temperature-stress operation SY Huang, TC Chang, MC Chen, SC Chen, CT Tsai, MC Hung, CH Tu, ... Electrochemical and Solid-State Letters 14 (4), H177, 2011 | 85 | 2011 |
| Formation of stacked Ni silicide nanocrystals for nonvolatile memory application WR Chen, TC Chang, PT Liu, PS Lin, CH Tu, CY Chang Applied Physics Letters 90 (11), 2007 | 77 | 2007 |
| High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure YC Wu, TC Chang, CY Chang, CS Chen, CH Tu, PT Liu, HW Zan, YH Tai Applied physics letters 84 (19), 3822-3824, 2004 | 59 | 2004 |
| Improved memory window for Ge nanocrystals embedded in SiON layer CH Tu, TC Chang, PT Liu, HC Liu, SM Sze, CY Chang Applied physics letters 89 (16), 2006 | 41 | 2006 |
| Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels YC Wu, TC Chang, PT Liu, CS Chen, CH Tu, HW Zan, YH Tai, CY Chang IEEE transactions on electron devices 52 (10), 2343-2346, 2005 | 33 | 2005 |
| Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction CC Lin, TC Chang, CH Tu, WR Chen, CW Hu, SM Sze, TY Tseng, ... Applied Physics Letters 93 (22), 2008 | 25 | 2008 |
| Enhanced performance of poly-Si thin film transistors using fluorine ions implantation CH Tu, TC Chang, PT Liu, HW Zan, YH Tai, CY Yang, YC Wu, HC Liu, ... Electrochemical and Solid-State Letters 8 (9), G246, 2005 | 25 | 2005 |
| Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal WR Chen, TC Chang, PT Liu, JL Yeh, CH Tu, JC Lou, CF Yeh, CY Chang Applied Physics Letters 91 (8), 2007 | 24 | 2007 |
| Improvement of Hydrogenated Amorphous-Silicon TFT Performances With Low-Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer TS Chang, TC Chang, PT Liu, TS Chang, CH Tu, FS Yeh IEEE electron device letters 27 (11), 902-904, 2006 | 24 | 2006 |
| Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors GW Chang, TC Chang, YE Syu, TM Tsai, KC Chang, CH Tu, FY Jian, ... Thin Solid Films 520 (5), 1608-1611, 2011 | 22 | 2011 |
| Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer CH Tu, TC Chang, PT Liu, HC Liu, CC Tsai, LT Chang, TY Tseng, SM Sze, ... Applied physics letters 89 (5), 2006 | 22 | 2006 |
| Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications LW Feng, CY Chang, TC Chang, CH Tu, PS Wang, YF Chang, MC Chen, ... Applied Physics Letters 95 (26), 2009 | 21 | 2009 |
| High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates YC Wu, TC Chang, PT Liu, CW Chou, YC Wu, CH Tu, CY Chang IEEE transactions on nanotechnology 5 (3), 157-162, 2006 | 21 | 2006 |
| Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC CH Tu, TC Chang, PT Liu, CY Yang, HC Liu, WR Chen, YC Wu, ... IEEE electron device letters 27 (4), 262-264, 2006 | 18 | 2006 |
| Moisture-induced material instability of porous organosilicate glass TC Chang, CW Chen, PT Liu, YS Mor, HM Tsai, TM Tsai, ST Yan, CH Tu, ... Electrochemical and solid-state letters 6 (4), F13, 2003 | 18 | 2003 |
| Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization YC Wu, TC Chang, PT Liu, YC Wu, CW Chou, CH Tu, JC Lou, CY Chang Applied Physics Letters 87 (14), 2005 | 17 | 2005 |
| Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation CH Tu, TC Chang, PT Liu, CH Chen, CY Yang, YC Wu, HC Liu, LT Chang, ... Journal of The Electrochemical Society 153 (9), G815, 2006 | 16 | 2006 |
| Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization YC Wu, TC Chang, CW Chou, YC Wu, PT Liu, CH Tu, WJ Huang, JC Lou, ... Journal of The Electrochemical Society 152 (7), G545, 2005 | 16 | 2005 |
Yung Chun WuNational Tsing Hua University在 ess.nthu.edu.tw 的电子邮件经过验证
Yung Chun WuNational Tsing Hua University在 ess.nthu.edu.tw 的电子邮件经过验证
Yu Chieh Lin在 georgetown.edu 的电子邮件经过验证
Yao-Feng ChangIntel在 utexas.edu 的电子邮件经过验证
Kuan-Chang ChangPeking University Shenzhen Graduate School在 pkusz.edu.cn 的电子邮件经过验证