Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications X Cao, X Li, X Gao, W Yu, X Liu, Y Zhang, L Chen, X Cheng Journal of Applied Physics 106 (7), 073723-073723-5, 2009 | 182 | 2009 |
Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang Nanotechnology 22 (47), 475702, 2011 | 119 | 2011 |
Ultrathin (< 10nm) Nb2O5/NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ... Int. VLSI, pp155-156, 2012 | 117 | 2012 |
All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature X Cao, X Li, X Gao, X Liu, C Yang, R Yang, P Jin Journal of Physics D: Applied Physics 44 (25), 255104, 2011 | 96 | 2011 |
Co-Occurrence of Threshold Switching and Memory Switching inCells for Crosspoint Memory Applications X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang IEEE Electron Device Letters 33 (2), 236-238, 2012 | 93 | 2012 |
Threshold current reduction for the metal–insulator transition in NbO2− x-selector devices: the effect of ReRAM integration SK Nandi, X Liu, DK Venkatachalam, RG Elliman Journal of Physics D: Applied Physics 48 (19), 195105, 2015 | 91 | 2015 |
Resistive switching characteristics and mechanism of thermally grown WOx thin films KP Biju, X Liu, M Siddik, S Kim, J Shin, I Kim, A Ignatiev, H Hwang Journal of Applied Physics 110 (6), 064505, 2011 | 88 | 2011 |
Threshold switching and electrical self-oscillation in niobium oxide films X Liu, S Li, SK Nandi, DK Venkatachalam, RG Elliman Journal of Applied Physics 120 (12), 124102, 2016 | 86 | 2016 |
Effects of the compliance current on the resistive switching behavior of TiO 2 thin films X Cao, XM Li, XD Gao, YW Zhang, XJ Liu, Q Wang, LD Chen Applied Physics A: Materials Science & Processing 97 (4), 883-887, 2009 | 86 | 2009 |
Complementary resistive switching in niobium oxide-based resistive memory devices X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang IEEE Electron Device Letters 34 (2), 235-237, 2013 | 67 | 2013 |
Self-Selective Characteristics of Nanoscale VOx Devices for High-Density ReRAM Applications M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ... Electron Device Letters, IEEE 33 (5), 718-720, 2012 | 66* | 2012 |
Reduced Threshold Current in NbO₂ Selector by Engineering Device Structure X Liu, SK Nandi, DK Venkatachalam, K Belay, S Song, RG Elliman Electron Device Letters, IEEE, 2014 | 65* | 2014 |
High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures S Li, X Liu, SK Nandi, DK Venkatachalam, RG Elliman Applied Physics Letters 106 (21), 212902, 2015 | 62 | 2015 |
Engineering electrodeposited ZnO films and their memristive switching performance AS Zoolfakar, R Ab Kadir, RA Rani, S Balendhran, X Liu, E Kats, ... Physical Chemistry Chemical Physics 15 (25), 10376-10384, 2013 | 60 | 2013 |
Origin of Current‐Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity S Li, X Liu, SK Nandi, SK Nath, RG Elliman Advanced Functional Materials 29 (44), 1905060, 2019 | 59 | 2019 |
The polarity origin of the bipolar resistance switching behaviors in junctions R Yang, XM Li, WD Yu, XD Gao, DS Shang, XJ Liu, X Cao, Q Wang, ... Applied Physics Letters 95 (7), 072105, 2009 | 59 | 2009 |
Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices KP Biju, XJ Liu, EM Bourim, I Kim, S Jung, M Siddik, J Lee, H Hwang Journal of Physics D: Applied Physics 43, 495104, 2010 | 50 | 2010 |
Effect of Electrode Roughness on Electroforming in HfO 2 and Defect-Induced Moderation of Electric-Field Enhancement SK Nandi, X Liu, DK Venkatachalam, RG Elliman Physical Review Applied 4 (6), 064010, 2015 | 49 | 2015 |
Low programming voltage resistive switching in reactive metal/polycrystalline Pr0. 7Ca0. 3MnO3 devices X Liu, KP Biju, EM Bourim, S Park, W Lee, J Shin, H Hwang Solid State Communications 150 (45-46), 2231-2235, 2010 | 49 | 2010 |
Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices SM Sadaf, X Liu, M Son, S Park, SH Choudhury, E Cha, M Siddik, J Shin, ... physica status solidi (a) 209 (6), 1179–1183, 2012 | 45 | 2012 |