| Influence of buffer carbon doping on pulse and AC behavior of insulated-gate field-plated power AlGaN/GaN HEMTs G Verzellesi, L Morassi, G Meneghesso, M Meneghini, E Zanoni, ... IEEE Electron Device Letters 35 (4), 443-445, 2014 | 115 | 2014 |
| Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer G Bersuker, D Heh, CD Young, L Morassi, A Padovani, L Larcher, KS Yew, ... 2010 IEEE International Reliability Physics Symposium, 373-378, 2010 | 43 | 2010 |
| InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax TW Kim, RJW Hill, CD Young, D Veksler, L Morassi, S Oktybrshky, J Oh, ... 2012 Symposium on VLSI Technology (VLSIT), 179-180, 2012 | 35 | 2012 |
| Errors Limiting Split-Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs L Morassi, G Verzellesi, H Zhao, JC Lee, D Veksler, G Bersuker IEEE transactions on electron devices 59 (4), 1068-1075, 2012 | 32 | 2012 |
| A physical model for post-breakdown digital gate current noise A Padovani, L Morassi, N Raghavan, L Larcher, W Liu, KL Pey, ... IEEE electron device letters 31 (9), 1032-1034, 2010 | 13 | 2010 |
| A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs G Sereni, L Vandelli, L Larcher, L Morassi, D Veksler, G Bersuker 2014 IEEE International Reliability Physics Symposium, 2C. 3.1-2C. 3.6, 2014 | 11 | 2014 |
| Extraction of interfacial state density in high-k/III-V gate stacks: problems and solutions D Veksler, G Bersuker, L Morassi, JH Yum, G Verzellesi, WE Wang, ... IEEE NMDC, 2013 | 10 | 2013 |
| Extraction of interface state density in oxide/III–V gate stacks D Veksler, G Bersuker, H Madan, L Morassi, G Verzellesi Semiconductor Science and Technology 30 (6), 065013, 2015 | 9 | 2015 |
| Interface-Trap Effects in Inversion-Type Enhancement-ModeN-Channel MOSFETs L Morassi, A Padovani, G Verzellesi, D Veksler, I Ok, G Bersuker IEEE transactions on electron devices 58 (1), 107-114, 2010 | 9 | 2010 |
| Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- on SixGe1−x and InxGa1−xAs: Part II—Fits and … SRM Anwar, WG Vandenberghe, G Bersuker, D Veksler, G Verzellesi, ... IEEE Transactions on Electron Devices 64 (9), 3794-3801, 2017 | 7 | 2017 |
| Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs L Morassi, G Verzellesi, H Zhao, JC Lee, D Veksler, G Bersuker IEEE transactions on electron devices 59 (12), 3651-3654, 2012 | 4 | 2012 |
| Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs L Morassi, G Verzellesi, A Padovani, L Larcher, P Pavan, D Veksler, I Ok, ... 2010 IEEE International Reliability Physics Symposium, 532-535, 2010 | 2 | 2010 |
| Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs L Morassi, G Verzellesi, L Larcher, H Zhao, JC Lee IPRM 2011-23rd International Conference on Indium Phosphide and Related …, 2011 | 1 | 2011 |
| Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric L Morassi, G Verzellesi, P Pavan, D Veksler, I Ok, H Zhao, JC Lee, ... IPRM 2011-23rd International Conference on Indium Phosphide and Related …, 2011 | 1 | 2011 |
| Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric L Morassi, G Verzellesi, P Pavan, D Veksler, I Ok, H Zhao, JC Lee, ... Proceedings of IPRM 2011, 103-105, 2011 | 1 | 2011 |
| Dispositivi MOSFET con Canale in InGaAs per l’Estensione della Tecnologia CMOS oltre il Nodo “16-nm L MORASSI | | 2013 |
| Connecting electrical and structural dielectric characteristics G Bersuker, D Veksler, CD Young, H Park, W Taylor, P Kirsch, R Jammy, ... International Journal of High Speed Electronics and Systems 20 (01), 65-79, 2011 | | 2011 |
| Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics L Morassi, A Padovani, G Verzellesi, D Veksler, I Ok, G Bersuker 19th European Workshop on Heterostructure Technology, 1-2, 2010 | | 2010 |
| Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing L Morassi, L Larcher, L Pantisano, A Padovani, R Degreave, MB Zahid, ... 41th International Conference on Solid State Devices and Materials, 1-2, 2009 | | 2009 |
| Solid-State Power and High Voltage Devices Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability... JB Steighner, J.-S. Yuan, and Y. Liu 180 Materials … E Harvard, R Brown, JR Shealy, DX Liu, HC Chin, LS Tan, YC Yeo, ... | | |
